V
Venkatesan Ananthan
Researcher at Micron Technology
Publications - 12
Citations - 105
Venkatesan Ananthan is an academic researcher from Micron Technology. The author has contributed to research in topics: Transistor & MOSFET. The author has an hindex of 4, co-authored 12 publications receiving 105 citations.
Papers
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Patent
Dual Work Function Recessed Access Device and Methods of Forming
Venkatesan Ananthan,Sanh D. Tang +1 more
TL;DR: In this article, a gate electrode consisting of two or more gate materials having different work functions was used to reduce the gate-induced drain leakage current losses from a recessed access device.
Patent
Semiconductor device comprising transistor structures and methods for forming same
TL;DR: In this article, a method for forming an opening within a semiconductor material comprises forming a neck portion, a rounded portion below the neck portion and, in some embodiments, a protruding part below the rounded portion.
Patent
Floating body transistor constructions, semiconductor constructions, and methods of forming semiconductor constructions
Sanh D. Tang,Venkatesan Ananthan +1 more
TL;DR: In this article, a floating body transistor constructions containing U-shaped semiconductor material slices is proposed, where the floating bodies of the transistors are within the central portions of the U-shapes.
Patent
Impact ionization devices and methods of making the same
TL;DR: In this paper, impact ionization devices including vertical and recessed impact ionisation metal oxide semiconductor field effect transistor (MOSFET) devices and methods of forming such devices were disclosed.
Proceedings ArticleDOI
Derivation of threshold voltage and drain current for cylindrical MOSFET and application to a recessed MOSFET
TL;DR: In this article, the threshold voltage and drive current for a cylindrical MOSFET have been rigorously derived for the purpose of analytical calculations, and the model has been verified against TCAD simulations.