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Vidya Kaushik
Researcher at Freescale Semiconductor
Publications - 70
Citations - 1653
Vidya Kaushik is an academic researcher from Freescale Semiconductor. The author has contributed to research in topics: Gate dielectric & High-κ dielectric. The author has an hindex of 17, co-authored 68 publications receiving 1630 citations. Previous affiliations of Vidya Kaushik include IMEC & Katholieke Universiteit Leuven.
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Method for forming a high dielectric constant material
TL;DR: In this article, the authors proposed a method to remove a single monolayer at a time by inserting a first gas to form a reaction layer on the silicon oxide and then the reaction layer is activated by either another gas or heat.
Journal ArticleDOI
The electronic conduction mechanism in barium strontium titanate thin films
TL;DR: In this article, a modified Schottky equation is applied to describe the conduction mechanism in perovskite-type titanate thin films, and the electronic mobility in thin films of barium strontium titanate is reported.
Journal ArticleDOI
Epitaxial oxide thin films on Si(001)
Z. Yu,Jamal Ramdani,Jay Curless,Corey Overgaard,Jeffrey M. Finder,Ravindranath Droopad,K. Eisenbeiser,J. A. Hallmark,W. J. Ooms,Vidya Kaushik +9 more
TL;DR: In this article, structural, interfacial and electrical properties of the oxide thin films on Si have been characterized using in situ reflection high energy electron diffraction, x-ray diffraction and spectroscopic ellipsometry.
Patent
High K dielectric film
TL;DR: A dielectric layer comprises lanthanum, aluminum and oxygen and is formed between two conductors or a conductor and substrate as mentioned in this paper, which can be formed by atomic layer chemical vapor deposition, physical vapor deposition or pulsed laser deposition.
Patent
Process for forming a high-K gate dielectric
TL;DR: In this paper, a method of processing a high K gate dielectric includes growing a high quality silicon dioxide layer at the silicon interface followed by deposition of a metal layer, which is then diffused into the silicon dioxide.