Patent
Integration of ALD tantalum nitride and alpha-phase tantalum for copper metallization application
Ling Chen,Hua Chung,Sean M. Seutter,Michael Yang,Ming Xi,Vincent W. Ku,Dien-Yeh Wu,Alan Ouye,Norman Nakashima,Barry Chin,Hong Zhang +10 more
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TLDR
In this paper, a method for forming a metal interconnect on a substrate is provided, which consists of depositing a refractory metal-containing barrier layer having a thickness less than about 20 angstroms on at least a portion of a metal layer by alternately introducing one or more pulses of metal containing compound and one or multiple pulses of nitrogen containing compound.Abstract:
A method for forming a metal interconnect on a substrate is provided. The method includes depositing a refractory metal-containing barrier layer having a thickness less than about 20 angstroms on at least a portion of a metal layer by alternately introducing one or more pulses of a metal-containing compound and one or more pulses of a nitrogen-containing compound. The method also includes depositing a seed layer on at least a portion of the barrier layer, and depositing a second metal layer on at least a portion of the seed layer. The barrier layer provides adequate barrier properties and allows the grain growth of the metal layer to continue across the barrier layer into the second metal layer thereby enhancing the electrical performance of the interconnect.read more
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Semiconductor device, and manufacturing method thereof
TL;DR: In this article, the oxide semiconductor film has at least a crystallized region in a channel region, which is defined as a region of interest (ROI) for a semiconductor device.
Patent
Substrate Processing Apparatus
TL;DR: In this article, a bypass pipe is connected between the mechanical booster pump and the rest vacuum pumps located at a downstream side of the booster pump to prevent the exhaust gas from diffusing back to the inside of a process chamber.
Patent
Gas delivery apparatus for atomic layer deposition
TL;DR: In this paper, an apparatus and method for performing a cyclical layer deposition process, such as atomic layer deposition, is provided. But this method is not suitable for high-dimensional data.
Patent
Apparatus and process for plasma-enhanced atomic layer deposition
Paul F. Ma,Kavita Shah,Wu Dien Yeh,Seshadri Ganguli,Christophe Marcadal,Frederick C. Wu,Schubert S. Chu +6 more
TL;DR: In this article, a lid assembly for conducting a vapor deposition process within a process chamber is provided which includes an insulation cap and a plasma screen, and the insulation cap may be positioned on top of the plasma screen to form a centralized gas region with the expanded channel and a circular gas regions with the groove.
Patent
Formation of boride barrier layers using chemisorption techniques
Jeong Soo Byun,Alfred Mak +1 more
TL;DR: In this paper, a method of forming a boride layer for integrated circuit fabrication is described, which is based on chemisorbing monolayers of boron-containing compound and one refractory metal compound onto a substrate.
References
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Patent
Multiple chamber integrated process system
Dan Maydan,Sasson Somekh,David Nin-Kou Wang,David Cheng,Masato M. Toshima,Isaac Harari,Peter D. Hoppe +6 more
TL;DR: In this paper, an integrated modular multiple chamber vacuum processing system is described, which includes a load lock, may include an external cassette elevator and an internal load lock wafer elevator, and also includes stations about the periphery of the load lock for connecting one, two or several vacuum process chambers to the load-lock chamber.
Patent
Sequential chemical vapor deposition
TL;DR: In this article, the authors proposed a method for sequential chemical vapor deposition by employing a reactor operated at low pressure, a pump to remove excess reactants, and a line to introduce gas into the reactor through a valve.
Patent
Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
David Nin-Kou Wang,John M. White,Kam S. Law,Cissy Leung,Salvador P. Umotoy,Kenneth S. Collins,John A. Adamik,Ilya Perlov,Dan Maydan +8 more
TL;DR: In this paper, a single wafer, semiconductor processing reactor is described, which is capable of thermal CVD, plasmaenhanced CVD and plasma assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple step processing.
Patent
Atomic layer deposition with nitrate containing precursors
TL;DR: In this paper, metal nitrate-containing precursor compounds are employed in atomic layer deposition processes to form metal-containing films, eg metal, metal oxide, and metal nitride, which films exhibit an atomically abrupt interface and an excellent uniformity.
Patent
Radical-assisted sequential CVD
TL;DR: In this article, a new method for CVD deposition on a substrate is taught wherein radical species are used in alternate steps to depositions from a molecular precursor to treat the material deposited from the molecular precursor and to prepare the substrate surface with a reactive chemical in preparation for the next molecular precursor step.