Abstract In the past 10 years, ZnO as a semiconductor has attracted considerable attention due to its unique properties, such as high electron mobility, wide and direct band gap and large exciton binding energy. ZnO has been considered a promising material for optoelectronic device applications, and the fabrications of high quality p-type ZnO and p–n junction are the key steps to realize these applications. However, the reliable p-type doping of the material remains a major challenge because of the self-compensation from native donor defects (V O and Zn i ) and/or hydrogen incorporation. Considerable efforts have been made to obtain p-type ZnO by doping different elements with various techniques. Remarkable progresses have been achieved, both theoretically and experimentally. In this paper, we discuss p-type ZnO materials: theory, growth, properties and devices, comprehensively. We first discuss the native defects in ZnO. Among the native defects in ZnO, V Zn and O i act as acceptors. We then present the theory of p-type doping in ZnO, and summarize the growth techniques for p-type ZnO and the properties of p-type ZnO materials. Theoretically, the principles of selection of p-type dopant, codoping method and X Zn –2V Zn acceptor model are introduced. Experimentally, besides the intrinsic p-type ZnO grown at O-rich ambient, p-type ZnO (MgZnO) materials have been prepared by various techniques using Group-I, IV and V elements. We pay a special attention to the band gap of p-type ZnO by band-gap engineering and room temperature ferromagnetism observed in p-type ZnO. Finally, we summarize the devices based on p-type ZnO materials.

RaoP-Type ZnO Materials: Theory, Growth, Properties, and Devices

Resveratrol for breast cancer prevention and therapy: Preclinical evidence and molecular mechanisms.

Recently the developments in the field of II-VI-oxides have been spectacular. Various epitaxial methods has been used to grow epitaxial ZnO layers. Not only epilayers but also sufficiently good-quality multiple quantum wells (MQWs) have also been grown by laser molecular-beam epitaxy (laser-MBE). We discuss mainly the experimental aspect of the optical properties of excitons in ZnO-based MQW heterostructures. Systematic temperature-dependent studies of optical absorption and photoluminescence in these MQWs were used to evaluate the well-width dependence and the composition dependence of the major excitonic properties. Based on these data, the localization of excitons, the influence of exciton-phonon interaction, and quantum-confined Stark effects are discussed. 
The optical spectra of dense excitonic systems are shown to be determined mainly by the interaction process between excitons and biexcitons. The high-density excitonic effects play a role for the observation of room-temperature stimulated emission in the ZnO MQWs. The binding energies of exciton and biexciton are enhanced from the bulk values, as a result of quantum-confinement effects.

Optical Properties of Excitons in ZnO-based Quantum Well Heterostructures

Surface plasmon resonance (SPR) has been intensively studied and widely employed for light trapping and absorption enhancement. In the mid-infrared and terahertz (THz) regime, graphene supports the tunable SPR via manipulating its Fermi energy and enhances light-matter interaction at the selective wavelength. In this work, periodic arrays of graphene rings are proposed to introduce tunable light trapping with good angle polarization tolerance and enhance the absorption in the light-absorbing materials nearby to more than one order. Moreover, the design principle here could be set as a template to achieve multi-band plasmonic absorption enhancement by introducing more graphene concentric rings into each unit cell. This work not only opens up new ways of employing graphene SPR, but also leads to practical applications in high-performance simultaneous multi-color photodetection with high efficiency and tunable spectral selectivity.

Tunable light trapping and absorption enhancement with graphene ring arrays

Surface plasmon resonance (SPR) has been intensively studied and widely employed for light trapping and absorption enhancement. In the mid-infrared and terahertz (THz) regime, graphene supports tunable SPR via manipulating its Fermi energy and enhances light–matter interaction at the selected wavelength. Most previous studies have concentrated on the absorption enhancement in graphene itself while little attention has been paid to trapping light and enhancing the light absorption in other light-absorbing materials with graphene SPR. In this work, periodic arrays of graphene rings are proposed to introduce tunable light trapping with good angle polarization tolerance and enhance the absorption in the surrounding light-absorbing materials by more than one order of magnitude. Moreover, the design principle here could be set as a template to achieve multi-band plasmonic absorption enhancement by introducing more graphene concentric rings into each unit cell. This work not only opens up new ways of employing graphene SPR, but also leads to practical applications in high-performance simultaneous multi-color photodetection with high efficiency and tunable spectral selectivity.

Electrostatic charging of powders becomes important, when particles become smaller, especially for fine powders at micron or sub-micron size. Charging of powders causes strong particle adhesion and consequently difficulties in processes such as blending or mixing, and sieving, etc. Not only does the charge of powders influence the process and the quality of the products, but also the discharge creates risks of dust explosion. Assessing powder charge and the hazards in manufacturing can be difficult. One of the major challenges is to evaluate the charge levels and polarity in the powders but this requires a significant number of tests to detect charge tendency and distributions in bulk materials, which is time-consuming. In this paper, electrostatic charging of powders in material handling processes and the associated hazards are briefly reviewed. For an assessment, the challenges for sensing electrostatic charges of particulate solids, particularly for fine powders, are discussed. It was revealed that sensing the charge polarity for representative samples of powders can be the main challenge because of the difficulty in separation of the charged particles. The inductive charge sensor showed great potential to measure charge levels and polarity distributions in powders. Experimental trials for several fine powders showed that the inductive charge sensor can be used for rapidly assessing chargeability and charge polarity distribution of powders.

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Electrostatic Charging of Fine Powders and Assessment of Charge Polarity Using an Inductive Charge Sensor

In this article, the valence band offset (VBOff) and conduction band offset (CBOff) values of Cu(In0.70Ga0.30)Se/3at.% Ga:Mg0.20Zn0.80O (GMZO) heterojunction, grown by dual ion beam sputtering system (DIBS), are calculated to understand the carrier transport mechanism at the heterojunction for realization of all sputtered buffer-less solar cells.

Vivek Garg

Papers

Electrostatic Charging of Fine Powders and Assessment of Charge Polarity Using an Inductive Charge Sensor

Evaluation of Ga:MgZnO/CIGSe Heterojunction for Realization of All Sputtered Buffer-Less Solar Cell

Theoretical investigation of electronic and optical properties of doped and defective MoSe2 monolayers

Growth optimization and DFT investigation of doping effect on properties of VS_2 monolayer crystals

Effect of Introducing Defects and Doping on Different Properties of Monolayer MoS2