A method of forming a native oxide from an aluminum-bearing Group III-V semiconductor material is provided. The method entails exposing the aluminum-bearing Group III-V semiconductor material to a water-containing environment and a temperature of at least about 375 C to convert at least a portion of said aluminum-bearing material to a native oxide characterized in that the thickness of said native oxide is substantially the same as or less than the thickness of that portion of said aluminum-bearing Group III-V semiconductor material thus converted. The native oxide thus formed has particular utility in electrical and optoelectrical devices, such as lasers.

Method for making aluminum gallium arsenide semiconductor device with native oxide layer

Plasma-Enhanced Chemical Vapor Deposition of Thin Films

A method of forming a native oxide from an aluminum-bearing Group III-V semiconductor material is provided. The method entails exposing the aluminum-bearing Group III-V semiconductor material to a water-containing environment and a temperature of at least about 375° C. to convert at least a portion of said aluminum-bearing material to a native oxide characterized in that the thickness of said native oxide is substantially the same as or less than the thickness of that portion of said aluminum-bearing Group III-V semiconductor material thus converted. The native oxide thus formed has particular utility in electrical and optoelectrical devices, such as lasers.

Semiconductor devices with native aluminum oxide regions

Characterization of electronic devices and materials by surface-sensitive analytical techniques

The investigation describes AlGaAs/InGaAs/GaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistors (MOS-PHEMTs) The gate dielectric is obtained by oxidizing AlGaAs in liquid phase The MOS-PHEMTs have a larger gate swing voltage, a lower gate leakage current and a higher breakdown voltage than their counterpart PHEMTs do

AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor with a liquid phase oxidized AlGaAs as gate dielectric

Auger, Rutherford backscattering, and x‐ray‐diffraction measurements show that plasma‐grown oxide films on Ga0.64Al0.36As are amorphous, uniform in composition with depth, and possess very sharp oxide‐semiconductor interfaces. The electrical properties (I‐V, C‐V) of these films are such that they may be used for surface passivation of optoelectronic devices and as dielectric layers in electronic device fabrication.

W. R. Wagner

Papers

Physical and electrical properties of plasma-grown oxide on Ga 0.64Al0.36As