W
Waldemar Gawron
Researcher at Military University of Technology in Warsaw
Publications - 122
Citations - 1266
Waldemar Gawron is an academic researcher from Military University of Technology in Warsaw. The author has contributed to research in topics: Photodiode & Dark current. The author has an hindex of 19, co-authored 116 publications receiving 1123 citations.
Papers
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Journal ArticleDOI
Ultimate performance of infrared photodetectors and figure of merit of detector material
Jozef Piotrowski,Waldemar Gawron +1 more
TL;DR: In this paper, a general model describing the ultimate performance of infrared photodetectors arising from fundamental properties of a semiconductor material is presented, and the model is applicable to a wide variety of infrared sensors and materials.
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Progress in MOCVD growth of HgCdTe heterostructures for uncooled infrared photodetectors
A. Piotrowski,Paweł Madejczyk,Waldemar Gawron,K. Kłos,J. Pawluczyk,Jaroslaw Rutkowski,Jozef Piotrowski,Antoni Rogalski +7 more
TL;DR: In this paper, the interdiffused multilayer process (IMP) was used for the growth of single layers and complex multi-layer heterostructures for uncooled infrared photodetectors.
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Analysis of Free-Space Optics Development
Janusz Mikołajczyk,Zbigniew Bielecki,Maciej Bugajski,Jozef Piotrowski,Jacek Wojtas,Waldemar Gawron,D. Szabra,Artur Prokopiuk +7 more
TL;DR: In this article, the main elements and operation limiting factors of free-space optical communications (FSO) systems have been identified and the main aspects of LasBITer project related to such hybrid technology for security and defence applications are presented.
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New generation of near-room-temperature photodetectors
TL;DR: In this paper, the performance of infrared photodetectors operated without cryogenical cooling is discussed, including the optimum design of the devices, the use of optical immersion of photoderivers to high refraction index lenses, and the optical resonant cavity.
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Performance modeling of MWIR InAs/GaSb/B–Al0.2Ga0.8Sb type-II superlattice nBn detector
Piotr Martyniuk,Jarosław Wróbel,Elena Plis,Paweł Madejczyk,Andrzej Kowalewski,Waldemar Gawron,Sanjay Krishna,Antoni Rogalski +7 more
TL;DR: In this paper, a voltage drop analysis on the InAs/GaSb/B?Al 0.2Ga0.8Sb type-II superlattice (T2SL) nBn detector was introduced to estimate the bias drop on the heterojunction barrier active region.