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Journal ArticleDOI

Ultimate performance of infrared photodetectors and figure of merit of detector material

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TLDR
In this paper, a general model describing the ultimate performance of infrared photodetectors arising from fundamental properties of a semiconductor material is presented, and the model is applicable to a wide variety of infrared sensors and materials.
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This article is published in Infrared Physics & Technology.The article was published on 1997-03-01. It has received 129 citations till now. The article focuses on the topics: Figure of merit & Photodetector.

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Citations
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Journal ArticleDOI

Nanostructured materials for photon detection

TL;DR: Progress in light sensing using nanostructured materials is reviewed, focusing on solution-processed materials such as colloidal quantum dots and metal nanoparticles.
Journal ArticleDOI

Infrared detectors: status and trends

TL;DR: In this article, the performance of infrared thermal detectors as compared to photon detectors is investigated and an overview of focal plane array architecture is given with emphasis on monolithic and hybrid structures.
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HgCdTe infrared detector material: history, status and outlook

TL;DR: A review of the history, the present status and possible future developments of HgCdTe ternary alloy for infrared (IR) detector applications is presented in this article.
Journal ArticleDOI

Infrared detectors: an overview

TL;DR: In this paper, the authors present progress in infrared (IR) detector technologies during 200 history of their development and the outlook for near-future trends in IR technologies is also presented.
References
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Book

Handbook on semiconductors

T. S. Moss
Journal ArticleDOI

Calculation of intrinsic carrier concentration in Hg1−xCdxTe

TL;DR: In this paper, the Kane nonparabolic approximation for band structure and recent measurements of the heavy hole mass mh and energy gap Eg were used to calculate the intrinsic carrier concentration in Hg1−xCdxTe.
Journal ArticleDOI

Absorption constant of Pb1−xSnxTe and Hg1−xCdxTe alloys☆

W.W. Anderson
- 01 Nov 1980 - 
TL;DR: In this paper, the Burstein-Moss shift of the absorption edge was derived for the absorption constant of Pb 1− x Sn x Te (LTT) and Hg 1−x Cd x,Te (HCT) in terms of the k−p band structure parameters appropriate to the two alloy systems.