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Weiqiang Wang

Researcher at Dalian University of Technology

Publications -  29
Citations -  884

Weiqiang Wang is an academic researcher from Dalian University of Technology. The author has contributed to research in topics: Stent & Coating. The author has an hindex of 12, co-authored 27 publications receiving 731 citations.

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Analysis of the transient expansion behavior and design optimization of coronary stents by finite element method

TL;DR: Modeling results showed that the dogboning phenomenon can be eliminated by improving geometry of a stent or/and varying the length of balloon over stent.
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Stent expansion in curved vessel and their interactions: a finite element analysis.

TL;DR: A finite element method to study the expansion of a stent in a curved vessel and their interactions and results show that in the CV model, the vessel was straightened by stenting and a hinge effect can be observed at extremes of the stent.
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Finite element analysis of the implantation of a balloon-expandable stent in a stenosed artery.

TL;DR: Finite element method (FEM) was used to simulate the stent implantation under the balloon inflation and deflation, and simulated results show that the distal end of stent, which tilts after expansion, may injure the artery wall.
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Delivery and release of nitinol stent in carotid artery and their interactions: A finite element analysis

TL;DR: A finite element method (FEM) model was built which is composed of a stenotic carotid tissue, a segmented-design nitinol stent and a sheath, and results show that the superelastic stents were delivered into the stenotic vessel lumen through the sheath and self-expanded in the internal and commonCarotid artery.
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Formation and in vitro/in vivo performance of "cortex-like" micro/nano-structured TiO 2 coatings on titanium by micro-arc oxidation

TL;DR: The combination of the dual-scale structure and the hydrophilicity of the "cortex-like" TiO2 coating synergistically resulted in an outstanding cytocompatibility and osseointegration, which may facilitate a higher level of implant success.