An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

A method for forming a conductive via in a semiconductor component is disclosed. The method includes providing a substrate (112) having a first surface and an opposing, second surface. At least one hole (118) is formed in the substrate extending between the first surface and the opposing, second surface. A seed layer (128) is formed on a sidewall defining the at least one hole of the substrate and coated with a conductive layer (130), and a conductive or nonconductive filler material (136) is introduced into the remaining space within the at least one hole. A method of forming a conductive via through a substrate using a blind hole is also disclosed. Semiconductor components and electronic systems having substrates including the conductive via of the present invention are also disclosed.

Process and integration scheme for fabricating conductive components through-vias and semiconductor components including conductive through-wafer vias

A semiconductor package including a top-surface metal layer for implementing circuit features provides improvements in top-surface interconnect density, more flexible routing and mounting of top surface semiconductor packages, dies and passive components or a conformal shield cap implementation. The metal layer interconnected with an internal substrate of the semiconductor package by blind vias laser-ablated through the encapsulation and filled with metal. The vias extend from the top surface to an internal package substrate or through the encapsulation to form bottom-side terminals. The metal layer may be formed by circuit patterns and/or terminals embedded within the encapsulation conformal to the top surface by laser-ablating channels in the top surface of the encapsulation and filling the channels with metal. A conformal coating may be applied to the top surface of the semiconductor package over the metal layer to prevent solder bridging to circuit patterns of the metal layer.

Semiconductor package including a top-surface metal layer for implementing circuit features

A semiconductor package including top-surface terminals for mounting another semiconductor package provides a three-dimensional circuit configuration that can provide removable connection of existing grid-array packages having a standard design. A semiconductor die is mounted on an electrically connected to a circuit substrate having terminals disposed on a bottom side for connection to an external system. The die and substrate are encapsulated and vias are laser-ablated or otherwise formed through the encapsulation to terminals on the top surface of the substrate that provide a grid array mounting lands to which another grid array semiconductor package may be mounted. The bottom side of the vias may terminate and electrically connect to terminals on the substrate, terminals on the bottom of the semiconductor package (through terminals) or terminals on the top of the semiconductor die. The vias may be plated, paste-filled, filled with a low melting point alloy and may have a conical profile for improved plating performance.

Method of manufacturing a semiconductor package

A through-wafer interconnect for imager, memory and other integrated circuit applications is disclosed, thereby eliminating the need for wire bonding, making devices incorporating such interconnects stackable and enabling wafer level packaging for imager devices. Further, a smaller and more reliable die package is achieved and circuit parasitics (e.g., L and R) are reduced due to the reduced signal path lengths.

Through-wafer interconnects for photoimager and memory wafers

A method forming a composite laminate structure includes providing first and second circuit board element each having circuitry on at least one face thereof and plated through holes. A voltage plane element is provided having at least one voltage plane having opposite faces with layers of partially cured photodielectric material on each face. At least one hole is photopatterned and etched through the voltage plane element but completely isolated from the voltage plane. Each through hole in the voltage plane element is aligned with a plated through hole in each of the circuit board elements to provide a surface on the voltage plane element communicating with the plated through holes. The voltage plane is laminated between the circuit board elements and the photoimageable material on the voltage plane is fully cured. The surfaces of the voltage plane element communicating with the plated through holes in the circuit board elements are plated with a conducting material to establish a connection between the circuitry on the first and second circuit board elements.

Composite laminate circuit structure and method of forming the same

A method of forming a printed circuit board or circuit card is provided with a metal layer which serves as a power plane sandwiched between a pair of photoimageable dielectric layers. Photoformed metal filled vias and photoformed plated through holes are in the photopatternable material, and signal circuitry is on the surfaces of each of the dielectric materials and connected to the vias and plated through holes. A border may be around the board or card including a metal layer terminating in from the edge of one of the dielectric layers. A copper foil is provided with clearance holes. First and second layers of photoimageable curable dielectric material is disposed on opposite sides of the copper which are photoimageable material. The patterns are developed on the first and second layers of the photoimageable material to reveal the metal layer through vias. At the clearance holes in the copper, through holes are developed where holes were patterned in both dielectric layers. Thereafter, the surfaces of the photoimageable material, vias and through holes are metalized by copper plating. This is preferably done by protecting the remainder of the circuitry with photoresist and utilizing photolithographic techniques. The photoresist is thereafter removed, leaving a circuit board or card having metalization on both sides, vias extending from both sides to the copper layer in the center, plated through holes connecting the two outer circuitized copper layers.

Two signal one power plane circuit board

A method provides for additive plating on a subcomposite having filled plated through holes. Fine-line circuitry is achieved via electroless deposition onto a dielectric substrate after the through hole is plated and filled. Fine-line circuitry may be routed over landless, plated through holes thereby increasing the aspect ratio and the available surface area for additional components and wiring.

Full additive process with filled plated through holes

A laminate circuit structure assembly is provided that comprises at least two modularized circuitized plane subassemblies; a joining layer located between each of the subassemblies and wherein the subassemblies and joining layer are bonded together with a cured dielectric from a bondable, curable dielectric. The subassemblies and joining layer are electrically interconnected with bondable electrically conductive material. The joining layer comprises dielectric layers disposed about an internal electrically conductive layer. The electrically conductive layer has a via and the dielectric layers each have a via of smaller diameter than the vias in the electrically conductive layer and are aligned with the vias in the electrically conductive layer. The vias are filled with electrically bondable electrically conductive material for providing electrical contact between the subassemblies.

Composite laminate circuit structure and methods of interconnecting the same

Methods of filling apertures, for example, through holes, in substrates are provided. The methods utilize a dielectric film, preferably a photoimageable dielectric film, which is employed to fill the apertures and to form a dielectric film disposed above the substrate at the same time. As a result, the aperture fill material is the same as, and indeed continuous with, the dielectric film which is disposed on the substrate. The method employs the following steps: providing a substrate having apertures; providing a dielectric film disposed on the substrate covering the apertures, reflowing the dielectric film to flow into the apertures and to form a dielectric film adherent to the substrate, to provide a continuous dielectric extending from the dielectric film into the apertures. In certain embodiments, after filling, additional apertures, such as vias, are photoimaged in the dielectric film. Preferably the vias are then metallized, and circuitry formed atop the dielectric film.

William E. Wilson

Papers

Composite laminate circuit structure and method of forming the same

Two signal one power plane circuit board

Full additive process with filled plated through holes

Composite laminate circuit structure and methods of interconnecting the same

Filling open through holes in a multilayer board