Disclosed are various embodiments for transmitting energy at multiple frequencies via a guided surface wave along the surface of a lossy medium such as, e.g., a terrestrial medium by exciting a guided surface waveguide probe.

Guided surface wave transmission of multiple frequencies in a lossy media

A high-frequency switch module which comprises a high-frequency switch circuit connected among an antenna, a transmission circuit, and a reception circuit and comprising switching elements and a surface acoustic wave filter connected between the high-frequency switch circuit and the reception circuit, uses a laminate constituted of dielectric layers having electrode patterns as the multilayered board, and has a phase correction circuit disposed between the switch circuit and the surface acoustic wave filter, wherein the high-frequency switch circuit comprises a switching element, a transmission line, and a capacitor as main elements, with at least a part of the transmission line and the capacitor constituted of an electrode pattern in the laminate, and with the surface acoustic wave filter mounted on the laminate.

High-frequency switch module

Disclosed herein are various embodiments for a guided surface wave receiver, comprising circuitry that identifies at least one frequency from a plurality of available frequencies associated with a transmission of a plurality of guided surface waves along a terrestrial medium; and circuitry that adjusts a frequency at which the guided surface wave receiver receives the transmission to the at least one frequency via the terrestrial medium.

Variable frequency receivers for guided surface wave transmissions

The presented PA proves the viability of CMOS technology for watt-level fully integrated power generation for wireless applications and serves as another step toward a single-chip cell-phone.

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A Fully Integrated Quad-Band GSM/GPRS CMOS Power Amplifier

The relationships between device feature size and device performance figures of merit (FoMs) are more complex for radio frequency (RF) applications than for digital applications. Using the devices in the key circuit blocks for typical RF transceivers, we review and give trends for the FoMs that characterize active and passive RF devices. These FoMs include transit frequency at unity current gain f/sub T/, maximum frequency of oscillation f/sub MAX/ at unit power gain, noise, breakdown voltage, capacitor density, varactor and inductor quality, and the like. We use the specifications for wireless communications systems to show how different Si-based devices may achieve acceptable FoMs. We focus on Si complementary metal-oxide-semiconductor (CMOS), Si Bipolar CMOS, and Si bipolar devices, including SiGe heterojunction bipolar transistors, RF devices, and integrated circuits (ICs). We analyze trends in the FoMs for Si-based RF devices and ICs and show how these trends relate to the technology nodes of the 2003 International Technology Roadmap for Semiconductors. We also compare FoMs for the best reported performance of research devices and for the performance of devices manufactured in high volumes, typically more than 10 000 devices. Certain commercial equipment, instruments, or materials are identified in this article to specify adequately the experimental or theoretical procedures. Such identification does not imply recommendation by any of the host institutions of the authors, nor does it imply that the equipment or materials are necessarily the best available for the intended purpose.

Device and technology evolution for Si-based RF integrated circuits

This paper presents two balun circuits derived from the lumped Lattice-type LC-balun. First the lumped LC-balun bridge elements are substituted by microstrip lines. This results in an improved performance at the 2nd and 3rd harmonic frequency for RF power amplifier output baluns. Secondly, the lumped Lattice-type LC-balun is extended to a dual band balun. Independent impedance transformation and balun conversion can be done at two different frequencies. The design equations are derived.

Lumped and distributed lattice-type LC-baluns

An impedance matching network comprises a first and a second signal terminal and a reference potential terminal. The network further comprises a first shunt branch between the first signal terminal and the reference potential terminal, the first shunt branch comprising a variable inductive element and a first capacitive element. The impedance matching network also comprises a second shunt branch between the second signal terminal and the reference potential terminal and comprising a second capacitive element. A series branch between the first signal terminal and the second signal terminal comprises a third capacitive element. Optionally, the first, second, and/or third capacitive element may be implemented as a variable capacitive element. The variable capacitive element comprises a plurality of transistors, wherein a combination of off-capacitances C off of the transistors provide an overall capacitance of the variable capacitive element as a function of at least two independent transistor control signals.

Impedance matching network with improved quality factor and method for matching an impedance

An impedance matching network includes a first terminal, a second terminal, and a reference potential terminal. The impedance matching network further includes a first shunt branch between the first terminal and the reference potential terminal, the first shunt branch including a capacitive element. The impedance matching network also includes a second shunt branch between the second terminal and the reference potential terminal, the second shunt branch including an inductive element. Furthermore, the impedance matching network includes a transmission line transformer with a first inductor path and a second inductor path, wherein the first inductor path connects the first terminal and the second terminal. An alternative impedance matching network includes a transformer and an adaptive matching network. The transformer is configured to transform an impedance connected to a first port so that a corresponding transformed impedance lies within a confined impedance region in a complex impedance plane.

Adjustable impedance matching network

In accordance with an embodiment, a circuit includes a plurality of switching networks coupled between a corresponding plurality of RF ports and a common RF port, and a control circuit. Each of the plurality of switching networks includes a first switch coupled between its corresponding RF port and the common RF port, and at least one of the plurality of switching networks includes a selectable network coupled between the first switch and the common RF port, such that the selectable network provides a DC path in a first state and a series capacitance in a second state.

System and Method for a Radio Frequency Switch

A radio frequency power amplifier for 4.8-5.7 GHz has been realized in a 0.35-/spl mu/m SiGe bipolar technology. The balanced two-stage push-pull power amplifier uses two on-chip transformers as input-balun and for interstage matching. Further, it uses three coils for the integrated LC-output balun and the RF choke. Thus, the power amplifier does not require any external components. At 1.0-V, 1.5-V, and 2.4-V supply voltages, output powers of 17.7 dBm, 21.6 dBm, and 25 dBm are achieved at 5.3 GHz. The respective power-added efficiencies (PAE) are 15%, 22%, and 24%. The small-signal gain is 26 dB. The output 1-dB compression point at 2.4 V is 22 dBm with a PAE of 14%.

Winfried Bakalski

Papers

Lumped and distributed lattice-type LC-baluns

Impedance matching network with improved quality factor and method for matching an impedance

Adjustable impedance matching network

System and Method for a Radio Frequency Switch

A fully integrated 5.3-GHz 2.4-V 0.3-W SiGe bipolar power amplifier with 50-/spl Omega/ output