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Wolf Gero Schmidt
Researcher at University of Paderborn
Publications - 382
Citations - 9174
Wolf Gero Schmidt is an academic researcher from University of Paderborn. The author has contributed to research in topics: Density functional theory & Adsorption. The author has an hindex of 46, co-authored 366 publications receiving 8281 citations. Previous affiliations of Wolf Gero Schmidt include Massey University & University of South Africa.
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Substrate Induced Thermal Decomposition of Perfluoro-Pentacene Thin Films on the Coinage Metals
TL;DR: In this paper, the thermal and chemical stability of perfluoropentacene (PFP) thin films grown by organic molecular beam deposition onto the (111)-oriented surfaces of the coinage metals copper, silver, and gold have been studied by means of temperature dependent X-ray photoelectron spectroscopy (XPS) and Near-Edge Xray absorption fine structure spectroscope (NEXAFS).
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Experimental and Theoretical High-Energy-Resolution X-ray Absorption Spectroscopy: Implications for the Investigation of the Entatic State
N. J. Vollmers,Patrick Müller,Alexander Hoffmann,Sonja Herres-Pawlis,Martin Rohrmüller,Wolf Gero Schmidt,Uwe Gerstmann,Matthias Bauer +7 more
TL;DR: To fully exploit the information contained in the spectra gained by the high-energy-resolution technique, (time-dependent) density functional theory calculations based on plane-wave and localized orbital basis sets are performed, which in combination allow the complete spectral range from the prepeak to the first resonances above the edge step to be covered.
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(4×2) and (2×4) reconstructions of GaAs and InP(001) surfaces
TL;DR: In this article, the atomic and electronic structure and the formation energy of the Ga-rich GaAs(001)-β2(4 x 2) surface is compared with recent results for the As-rich As-As (001)-(2 x 4) surface reconstructions.
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Chemisorption of antimony on gaas(110)
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Combined ab initio and classical potential simulation study on silicon carbide precipitation in silicon
TL;DR: In this paper, the authors present an atomic simulation on the silicon carbide precipitation in bulk silicon employing both, classical potential and first-principles methods, aiming at a comprehensive, microscopic understanding of the precipitation mechanism in the context of controversial discussions.