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Xiao-Liang Qi
Researcher at Stanford University
Publications - 241
Citations - 58402
Xiao-Liang Qi is an academic researcher from Stanford University. The author has contributed to research in topics: Topological insulator & Topological order. The author has an hindex of 79, co-authored 236 publications receiving 49948 citations. Previous affiliations of Xiao-Liang Qi include Geballe Laboratory for Advanced Materials & Google.
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Journal ArticleDOI
Topological insulators and superconductors
Xiao-Liang Qi,Shou-Cheng Zhang +1 more
TL;DR: Topological superconductors are new states of quantum matter which cannot be adiabatically connected to conventional insulators and semiconductors and are characterized by a full insulating gap in the bulk and gapless edge or surface states which are protected by time reversal symmetry.
Journal ArticleDOI
Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface
TL;DR: In this article, first-principles electronic structure calculations of the layered, stoichiometric crystals Sb2Te3, Bi2Se3, SbSe3 and BiSe3 were performed.
Journal ArticleDOI
Quantum Spin Hall Insulator State in HgTe Quantum Wells
Markus König,Steffen Wiedmann,Steffen Wiedmann,Christoph Brüne,Christoph Brüne,Andreas Roth,Andreas Roth,Hartmut Buhmann,Hartmut Buhmann,Laurens W. Molenkamp,Laurens W. Molenkamp,Xiao-Liang Qi,Xiao-Liang Qi,Shou-Cheng Zhang,Shou-Cheng Zhang +14 more
TL;DR: The quantum phase transition at the critical thickness, d = 6.3 nanometers, was independently determined from the magnetic field–induced insulator-to-metal transition, providing experimental evidence of the quantum spin Hall effect.
Quantum Spin Hall Insulator State in HgTe Quantum Wells
Markus König,Steffen Wiedmann,Steffen Wiedmann,Christoph Brüne,Christoph Brüne,Andreas Roth,Andreas Roth,Hartmut Buhmann,Hartmut Buhmann,Laurens W. Molenkamp,Laurens W. Molenkamp,Xiao-Liang Qi,Xiao-Liang Qi,Shou-Cheng Zhang,Shou-Cheng Zhang +14 more
TL;DR: In this article, the quantum spin Hall effect was observed in HgTe/(Hg,Cd)Te quantum wells with well width d 6.3 nanometers and the residual conductance was independent of sample width, indicating that it is caused by edge states.
Journal ArticleDOI
Experimental realization of a three-dimensional topological insulator, Bi2Te3
Yulin Chen,James Analytis,James Analytis,Jiun-Haw Chu,Jiun-Haw Chu,Zhongkai Liu,Zhongkai Liu,Sung-Kwan Mo,Sung-Kwan Mo,Xiao-Liang Qi,Xiao-Liang Qi,Huaiying Zhang,Donghui Lu,Xi Dai,Zhong Fang,Shou-Cheng Zhang,Shou-Cheng Zhang,Ian R. Fisher,Ian R. Fisher,Zahid Hussain,Zhi-Xun Shen,Zhi-Xun Shen +21 more
TL;DR: The results establish that Bi2Te3 is a simple model system for the three-dimensional topological insulator with a single Dirac cone on the surface, and points to promising potential for high-temperature spintronics applications.