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Xiaoming Wen

Researcher at Swinburne University of Technology

Publications -  183
Citations -  8303

Xiaoming Wen is an academic researcher from Swinburne University of Technology. The author has contributed to research in topics: Perovskite (structure) & Photoluminescence. The author has an hindex of 43, co-authored 174 publications receiving 6014 citations. Previous affiliations of Xiaoming Wen include University of New South Wales & Imperial College London.

Papers
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Journal ArticleDOI

Characterization of a Cu2ZnSnS4 solar cell fabricated by sulfurization of metallic precursor Mo/Zn/Cu/Sn

TL;DR: In this article, various characterization methods are implemented to investigate the fundamental properties of a Cu2ZnSnS4 (CZTS) solar cell, including the chemical distribution across the CZTS grain boundaries, the surface potential of the absorber, the minority lifetime, the carrier collection length, diode ideality factor, dark saturation current, and series resistance.
Proceedings ArticleDOI

Evaluation of hafnium nitride and zirconium nitride as Hot Carrier absorber

TL;DR: In this article, the main mechanisms of carrier cooling and possible approaches to restrict these mechanisms are discussed, and the potential absorber materials for HC solar cells are presented as potential absorbber materials.
Journal ArticleDOI

Electron dynamics in modulation p-doped InGaAs/GaAs quantum dots

TL;DR: In this paper, the electron dynamics of p-type modulation doped and undoped InGaAs/GaAs quantum dots using up-conversion photoluminescence at low temperature and room temperature were investigated.
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Numerical calculation of optical phonon decay rate in InN/GaN MQW

TL;DR: In this article, the decay channels of the A1 and the high-lying E2 optical phonons in an InN/GaN MQW were analyzed and it was shown that no Klemens decay is present in A1 mode whereas on the contrary E2 is dominated by this process.
Journal ArticleDOI

Carrier dynamics in p-type InGaAs/GaAs quantum dots

TL;DR: In this article, the authors investigated the carrier relaxation dynamics in p-type doped InGaAs/GaAs quantum dots using time-integrated and time-resolved photoluminescence.