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Xiuyun Lei

Researcher at Chinese Academy of Sciences

Publications -  20
Citations -  131

Xiuyun Lei is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Dielectric & Thin film. The author has an hindex of 8, co-authored 10 publications receiving 111 citations.

Papers
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Dielectric, ferroelectric and piezoelectric properties of 100-oriented Pb0.4Sr0.6TiO3 thin film sputtered on LaNiO3 electrode

TL;DR: In this article, the PST thin film with a perfect (100) orientation was deposited on SiO 2 /Si substrate by magnetron sputtering method, and the dielectric constant and piezoelectric coefficient significantly increase while the average coercive field is strongly lowered when LNO is used as the top electrode.
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Low Temperature Deposition of High Performance Lead Strontium Titanate Thin Films by in situ RF Magnetron Sputtering

TL;DR: In this paper, high-oriented lead strontium titanate (Pb0.4Sr0.6TiO3) thin films were deposited on LaNiO3 -coated Si substrate via radio-frequency magnetron sputtering method with substrate temperature ranging from 300 to 500°C.
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Magnetocapacitance effects of Pb0.7Sr0.3TiO3/La0.7Sr0.3MnO3 thin film on Si substrate

TL;DR: In this paper, a PST/LSMO thin film has been deposited on Si substrate by chemical solution deposition, and anomalous changes in dielectric constant and loss as functions of frequency and magnetic field were observed.
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Optimization of PST Thin Films Grown by Sputtering and Complete Dielectric Performance Evaluation: An Alternative Material for Tunable Devices

TL;DR: PbxSr1-xTiO3 (PST) thin films with the ratio Pb/Sr = 40/60 were deposited on silicon substrate with Pt or LaNiO3 bottom electrodes by radio frequency magnetron sputtering followed by a postannealing treatment.
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Microwave evaluation of Pb0.4Sr0.6TiO3 thin films prepared by magnetron sputtering on silicon: Performance comparison with Ba0.3Sr0.7TiO3 thin films

TL;DR: Pb0.4Sr0.6TiO3 (PST) thin films were deposited on high resistivity silicon substrate by radio frequency magnetron sputtering and a pure perovskite phase was obtained at a low post annealing temperature of 650°C as mentioned in this paper.