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Y. J. Kuang
Researcher at University of California, San Diego
Publications - 27
Citations - 513
Y. J. Kuang is an academic researcher from University of California, San Diego. The author has contributed to research in topics: Molecular beam epitaxy & Photoluminescence. The author has an hindex of 12, co-authored 27 publications receiving 469 citations. Previous affiliations of Y. J. Kuang include University of California, Los Angeles.
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Journal ArticleDOI
Sputtered NiOx Films for Stabilization of p+n-InP Photoanodes for Solar-Driven Water Oxidation
TL;DR: In this paper, a photoanode protection strategy using a multifunctional NiO_x coating is presented, and the ransparency/antireflectivity, low electrochromism, conduction of holes, corrosion protection, and active electrocatalysis for water-oxidation half-reaction are described.
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Electronic Band Structure of GaN x P y As 1 − x − y Highly Mismatched Alloys: Suitability for Intermediate-Band Solar Cells
Robert Kudrawiec,Robert Kudrawiec,A. V. Luce,A. V. Luce,Marta Gladysiewicz,M. Ting,Y. J. Kuang,Charles W. Tu,Oscar D. Dubon,Oscar D. Dubon,Kin Man Yu,Wladek Walukiewicz +11 more
TL;DR: A theoretical and experimental study of GaNPAs with ~40% phosphorus and up to 2% nitrogen was conducted by as mentioned in this paper, who found that this HMA has an electronic band structure well suited for IBSC applications.
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Towards high-resolution retinal prostheses with direct optical addressing and inductive telemetry
Sohmyung Ha,Massoud L. Khraiche,Abraham Akinin,Yi Jing,Samir Damle,Y. J. Kuang,Sue Bauchner,Yu-Hwa Lo,William R. Freeman,Gabriel A. Silva,Gert Cauwenberghs +10 more
TL;DR: Measurements demonstrate control over retinal neural activity both by light and electrical bias, validating the feasibility of the proposed architecture and its system components as an important first step towards a high-resolution optically addressed retinal prosthesis.
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Growth and photoluminescence of self-catalyzed GaP/GaNP core/shell nanowires on Si(111) by gas source molecular beam epitaxy
TL;DR: In this paper, a study on self-catalyzed GaP/GaNP core/shell nanowires (NWs) grown on Si(111) by gas-source molecular beam epitaxy is presented.
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GaNAsP: An intermediate band semiconductor grown by gas-source molecular beam epitaxy
TL;DR: In this article, a dilute nitride GaNAsP thin film was grown via a GaAsP metamorphic buffer on GaP(100) substrate with gas-source molecular beam epitaxy.