Ya-Fen Wu

TL;DR: In this paper, a steady-state rate-equation model for temperature-dependent luminescence spectra from localized-state material system is presented, where the effects of thermal emission, recapturing, radiative and nonradiative recombination are taken into account in the model.

TL;DR: In this article, thermal effects on the optoelectrical characteristics of green InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) have been investigated in detail for a broad temperature range, from 30°C to 100°C.

TL;DR: In this article, the authors investigated the effects of the carrier dynamics on the temperature and excitation intensity dependence of photoluminescence (PL) of self-assembled InAs∕GaAs quantum dot heterostructures having different size uniformities.

TL;DR: In this article, the S-and W-shaped temperature dependences of the peak energy and linewidth from the EL spectra are demonstrated to be in fair agreement with the carrier motion and thermalization process through hopping over localized states within the Inrich regions.

TL;DR: In this article, a rate equation model was proposed to take into account the dot size distribution, the random population of density of states, state filling effects, and the important carrier transfer mechanisms for the quantum dot system, including carrier capture, relaxation, thermal emission, and retrapping.