Journal ArticleDOI
The effect of junction temperature on the optoelectrical properties of InGaN/GaN multiple quantum well light-emitting diodes
Jen-Cheng Wang,Chia-Hui Fang,Ya-Fen Wu,Wei-Jen Chen,Da-Chuan Kuo,Ping-Lin Fan,Joe-Air Jiang,Tzer-En Nee +7 more
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TLDR
In this article, thermal effects on the optoelectrical characteristics of green InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) have been investigated in detail for a broad temperature range, from 30°C to 100°C.About:
This article is published in Journal of Luminescence.The article was published on 2012-02-01. It has received 19 citations till now. The article focuses on the topics: Light-emitting diode & Junction temperature.read more
Citations
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Journal ArticleDOI
Investigation of the Electroluminescence Mechanism of GaN-Based Blue and Green Light-Emitting Diodes with Junction Temperature Range of 120–373 K
TL;DR: In this article, the authors investigated the electroluminescence spectra of blue and green LEDs in a Tj range of 120-373 K and in a current range of 80-240 mA based on accurate real-time measurements of Tj using an LED with a built-in sensor unit.
Journal ArticleDOI
Diode junction temperature in ultraviolet AlGaN quantum-disks-in-nanowires
Davide Priante,Rami T. ElAfandy,Aditya Prabaswara,Bilal Janjua,Chao Zhao,Mohd Sharizal Alias,Malleswararao Tangi,Yazeed Alaskar,Abdulrahman M. Albadri,Ahmed Y. Alyamani,Tien Khee Ng,Boon S. Ooi +11 more
TL;DR: In this article, the authors acknowledge the financial support from the King Abdulaziz City for Science and Technology (KACST), Grant No. KACST TIC R2-FP-008.
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Temperature-dependent efficiency droop analysis of InGaN MQW light-emitting diode with modified ABC model
TL;DR: In this paper, a simple internal quantum efficiency (IQE) estimation method is developed by modifying the conventional ABC model to include carrier leakage mechanisms such as thermionic emission and carrier overflow, to account for the carrier injection efficiency at high current densities.
Journal ArticleDOI
Improving Peak-Wavelength Method to Measure Junction Temperature by Dual-Wavelength LEDs
Yukun Zhao,Feng Yun,Lungang Feng,Shuai Wang,Yufeng Li,Xilin Su,Maofeng Guo,Wen Ding,Ye Zhang +8 more
TL;DR: The improved method measuring the junction temperature of light-emitting diodes (LEDs) has been studied experimentally and has a high applicability, which is practical for the LED chips vary from blue to green chips under different currents, including the packaged chips.
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Non-Dispersive Ultra-Violet Spectroscopic Detection of Formaldehyde Gas for Indoor Environments
TL;DR: In this article, a two-channel sensor was developed, making use of a strong absorption peak at 339 nm and a neighboring region of negligible absorption at 336 nm as a reference.
References
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Journal ArticleDOI
High-brightness InGaN blue, green and yellow light-emitting diodes with quantum well structures
TL;DR: In this paper, high-brightness blue, green and yellow light-emitting diodes (LEDs) with quantum well structures based on III-V nitrides were grown by metalorganic chemical vapor deposition on sapphire substrates.
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Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters
Isamu Akasaki,Hiroshi Amano +1 more
TL;DR: In this paper, the growth mechanism in heteroepitaxial growth of nitrides on highly mismatched substrates has been investigated and shown to yield high quality GaN, AlGaN, GaInN and their quantum well structures.
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Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect
Tetsuya Takeuchi,Christian Wetzel,Shigeo Yamaguchi,Hiromitsu Sakai,Hiroshi Amano,Isamu Akasaki,Yawara Kaneko,Shigeru Nakagawa,Yoshifumi Yamaoka,Norihide Yamada +9 more
TL;DR: In this article, the piezoelectric field points from the growth surface to the substrate and its magnitude is 1.2 MV/cm for Ga0.84In0.16N/GaN quantum wells on sapphire substrate.