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Yan Chen
Researcher at Anhui University
Publications - 5
Citations - 73
Yan Chen is an academic researcher from Anhui University. The author has contributed to research in topics: Static random-access memory & Soft error. The author has an hindex of 2, co-authored 5 publications receiving 6 citations.
Papers
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Journal ArticleDOI
Novel Speed-and-Power-Optimized SRAM Cell Designs With Enhanced Self-Recoverability From Single- and Double-Node Upsets
TL;DR: This paper presents two novel radiation-hardened SRAM cell designs, namely S4P8N and S8P4N, with enhanced self-recoverability from single-node upsets (SNUs) and Double-nodeupsets (DNUs), and Simulation results validate the high robustness of the proposed SRAM cells.
Journal ArticleDOI
Design of Double-Upset Recoverable and Transient-Pulse Filterable Latches for Low-Power and Low-Orbit Aerospace Applications
Aibin Yan,Yan Chen,Zhelong Xu,Zhili Chen,Jie Cui,Zhengfeng Huang,Patrick Girard,Xiaoqing Wen +7 more
TL;DR: The DURTPF-EV latch is more cost-effective and its reliability is also enhanced, making it more suitable for low power and low-orbit aerospace applications.
Proceedings ArticleDOI
Design of a Sextuple Cross-Coupled SRAM Cell with Optimized Access Operations for Highly Reliable Terrestrial Applications
TL;DR: This paper presents a novel Sextuple Cross-Coupled SRAM cell, namely SCCS cell, which can tolerate both SNUs and DNUs, and Simulation results validate the excellent robustness of the proposed cell.
Proceedings ArticleDOI
Design of a Highly Reliable SRAM Cell with Advanced Self-Recoverability from Soft Errors
Zhengda Dou,Albin Yan,Jun Zhou,Yuanjie Hu,Yan Chen,Tianming Ni,Jie Cui,Patrick Girard,Xiaoqing Wen +8 more
TL;DR: Compared with the state-of-the-art hardened SRAM cells, the proposed SESRS cell can reduce read access time by 61.93% on average and reduce power consumption by 49.78% and silicon area by 7.92%, compared with the only existing SRAM cell which can self-recover from all possible DNUs.
Proceedings ArticleDOI
A Sextuple Cross-Coupled SRAM Cell Protected against Double-Node Upsets
TL;DR: In this article, a sextuple cross-coupled SRAM cell, namely SCCS18T, is proposed to provide self-recoverability from any single-node upsets (SNUs) and partial double-node downsets (DNUs), and it has optimized operation speed due to the use of six access transistors.