Showing papers by "Yang Yang published in 1990"
TL;DR: In this paper, a new approach based on the exponentially modified Gaussian (EMG) function is presented for the quantification of a partially overlapped peak pair, which can be employed in a wide range of peak area ratio and asymmetry, provided that the relative valley between the two peaks is not greater than 55%.
Abstract: Based on the exponentially modified Gaussian (EMG) function, a new approach is presented for the quantitation of a partially overlapped peak pair. This approach can be employed in a wide range of peak area ratio and asymmetry, provided that the relative valley between the two peaks is not greater than 55%. The first peak area is calculated by the use of the ratio of the front half-width at height fraction 0.1 to that at heigt fraction 0.5. The second peak area is calculated by subtracing the first peak area from the total area which is provided by a microprocessor-based integrator. The relative error for the first peak never exceeds ±5%, but this is not always the case for the second peak. The relative error for the second peak depends not only on the accuracy of the total area and that of the first peak area but on area ratio as well.
6 citations
TL;DR: Deep level transient spectroscopoy (DLTS) was used for studies of defects in edge-defined film-fed grown solar cells for the first time, specific electronic traps were observed and identified in this polycrystalline silicon material as discussed by the authors.
Abstract: Deep level transient spectroscopoy (DLTS) was used for studies of defects in edge‐defined film‐fed grown solar cells For the first time, specific electronic traps were observed and identified in this polycrystalline silicon material The DLTS spectra were taken in the extended temperature range 80–450 K, and a number of deep centers were detected Several dislocation‐ and impurity‐related states were identified at low concentrations in the processed solar cells Variations in crystal growth conditions were shown to produce a novel high‐temperature peak which exhibited a strong correlation to the bulk lifetime of the solar cell
3 citations
TL;DR: In this article, the drift velocity of polydiacetylene thin film single crystals was measured by using steady state and transient photoconductivity techniques and the electric field dependence of the steady state photocurrent was investigated.
Abstract: Charge carrier generation and transport mechanisms in polydiacetylene thin film single crystals., poly-PTS (2,4-hexadiyne-1,6-diol bis(p-toluenesulfonate)) and poly- BTFP (bis-(4-n-butyl-2,3,5,6-tetra-fluorophenyl) butadiyne), are studied by using steady state and transient photoconductivity techniques. The electric field dependence of the steady state photocurrent is superlinear for both samples. Dependence of photocurrent on incident light polarization has been investigated. The polarization dependence of photocurrent has completely different behavior for the polydiacetylene PTS and BTFP. Single-gap transmission line experiment has been designed to directly measure the drift velocity of PTS single crystals. A drift velocity of the order of 10 6 cm/s was measured.
1 citations
21 May 1990
TL;DR: Deep levels in processed edge-defined film-fed-grown (EFG) silicon solar cells were investigated using deep-level transient spectroscopy (DLTS) as discussed by the authors.
Abstract: Deep levels in processed edge-defined film-fed-grown (EFG) silicon solar cells were investigated using deep-level transient spectroscopy (DLTS). Several deep levels were observed in the polycrystalline solar cells, typically at concentrations near 10/sup 12/ cm/sup -3/. The trap signatures of many of these levels corresponded with those reported for polycrystalline silicon grown by other methods, and therefore tentative trap identifications were made. These levels were associated with iron, aluminum, and other impurities and were often coupled with dislocations or grain boundaries. Deep-level spectra taken in a high-temperature range, extending up to 450 K, revealed a novel feature which appears to be trap related. This feature showed a strong correspondence with bulk lifetime, as determined by the infrared photoconductivity method, for samples fabricated from different crystal growth conditions. A possible explanation for this surprising high-temperature feature is presented. >
1 citations