An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Described herein is a method of decreasing expression of HOXA1 in a subject having a cancer and/or myeloproliferative disorder associated with overexpression of a HOXA1 gene product where an effective amount of at least one miR-10a gene product or an isolated variant or biologically-active fragment thereof is administered to the subject sufficient to decrease expression of the HOXA1 gene product in the subject.

https://www.pnas.org/content/pnas/103/13/5078.full.pdf

MicroRNA fingerprints during human megakaryocytopoiesis

A method of enhanced atomic layer deposition is described. In an embodiment, the enhancement is the use of plasma. Plasma begins prior to flowing a second precursor into the chamber. The second precursor reacts with a prior precursor to deposit a layer on the substrate. In an embodiment, the layer includes at least one element from each of the first and second precursors. In an embodiment, the layer is TaN. In an embodiment, the precursors are TaF 5 and NH 3 . In an embodiment, the plasma begins during the purge gas flow between the pulse of first precursor and the pulse of second precursor. In an embodiment, the enhancement is thermal energy. In an embodiment, the thermal energy is greater than generally accepted for ALD (>300 degrees Celsius). The enhancement assists the reaction of the precursors to deposit a layer on a substrate.

Enhanced atomic layer deposition

A phase change memory cell includes first and second electrodes electrically coupled by a phase change element. At least a section of the phase change element comprises a higher reset transition temperature portion and a lower reset transition temperature portion. The lower reset transition temperature portion comprises a phase change region which can be transitioned, by the passage of electrical current therethrough, from generally crystalline to generally amorphous states at a lower temperature than the higher reset transition temperature portion. The phase change element may comprise an outer, generally tubular, higher reset transition temperature portion surrounding an inner, lower reset transition temperature portion.

Phase change memory cell and manufacturing method

Programmable resistive RAM cells have a resistance that depends on the size of the contacts. Manufacturing methods and integrated circuits for lowered contact resistance are disclosed that have contacts of reduced size.

Programmable resistive RAM and manufacturing method

In order to provide a semiconductor integrated circuit device such as a high-performance semiconductor integrated circuit device capable of reducing a soft error developed in each memory cell of a SRAM, the surface of a wiring of a cross-connecting portion, of a SRAM memory cell having a pair of n-channel type MISFETs whose gate electrodes and drains are respectively cross-connected, is formed in a shape that protrudes from the surface of a silicon oxide film. A silicon nitride film used as a capacitive insulating film, and an upper electrode are formed on the wiring. A capacitance can be formed of the wiring, the silicon nitride film and the upper electrode.

SRAM having an improved capacitor

Technology is disclosed for highly accurate automated execution of processing for alignment of a detection area to a DNA microarray image file and processing for quantitative determination of success/failure of the alignment during DNA microarray analysis. A probe reactive chip used for the technology comprises a substrate; a spot region wherein spots for fixing a probe capable of specifically reacting to a sample marked so as to be optically detectable are formed in a matrix on a surface of the substrate; and a reference pattern area, which is arranged within the spot region or approximate to the spot region, and comprises a plurality of different alignment marks in order to correct misalignment of the spot during analysis of the sample on the surface of the substrate.

Probe reactive chip, apparatus for analyzing sample and method thereof

A SRAM having its memory cell constructed to include transfer MISFETs to be controlled by word lines and a flip-flop circuit having driver MISFETs and load MISFETs. Plate electrodes of large area fixed on predetermined power source lines are arranged over the load MISFETs such that the plate electrodes over the offset region of the load MISFETs are formed with an opening. A silicon nitride film having a thickness permeable to hydrogen but not to humidity is formed over the transfer MISFETs and the driver MISFETs formed over the main surface of a semiconductor substrate and the load MISFETs formed of a polycrystalline silicon film deposited on the driver MISFETs.

Semiconductor integrated circuit device and process of manufacturing the same

PROBLEM TO BE SOLVED: To quantitatively, automatically and highly accurately perform positioning processing and positioning possibility determining processing of a detecting area to a DNA microarray image file in an analysis of a DNA microarray. SOLUTION: This sample analyzer has a base board 2, a spot area 1b for forming a spot for fixing a probe singularly reactable with a sample optically detectibly marked on a base board surface in a matrix shape, and reference pattern areas 1c and 1d arranged in the spot area or the vicinity of the spot area on the base board surface, and composed of a plurality of different kinds of position marks for correcting positional dislocation of the spot in an analysis of a sample. COPYRIGHT: (C)2004,JPO

Probe reactive chip, sample analyzer and sample analyzing method

PROBLEM TO BE SOLVED: To quantitatively, automatically and precisely execute processes in the analysis of a DNA microarray, in which the detection area is positioned in a DNA microarray image file, and the success or failure of positioning processing is decided SOLUTION: A device is provided with: a substrate 2; a spot area 1b of spots, which are in the form of a matrix on a surface of the substrate and in which probes reactive specifically to a sample labeled so as to be optically detectable are immobilized; and reference pattern areas (1c, 1d) which are arranged in or near the spot area on the surface of the substrate and composed of a plurality of different position marks used for compensating displacements of the spots in an analysis of the sample COPYRIGHT: (C)2005,JPO&NCIPI

Yasuko Yoshida

Papers

SRAM having an improved capacitor

Probe reactive chip, apparatus for analyzing sample and method thereof

Semiconductor integrated circuit device and process of manufacturing the same

Probe reactive chip, sample analyzer and sample analyzing method

Device and method for analyzing sample