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Yasunobu Sugimoto
Researcher at Nichia
Publications - 29
Citations - 7402
Yasunobu Sugimoto is an academic researcher from Nichia. The author has contributed to research in topics: Laser & Diode. The author has an hindex of 26, co-authored 29 publications receiving 7272 citations.
Papers
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Journal ArticleDOI
InGaN-Based Multi-Quantum-Well-Structure Laser Diodes.
Shuji Nakamura,Masayuki Senoh,Shin–ichi Nagahama,Naruhito Iwasa,Takao Yamada,Toshio Matsushita,Hiroyuki Kiyoku,Yasunobu Sugimoto +7 more
TL;DR: In this article, the InGaN multi-quantum-well (MQW) structure was used for laser diodes, which produced 215mW at a forward current of 2.3
Journal ArticleDOI
InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate
Shuji Nakamura,Masayuki Senoh,Shinichi Nagahama,Naruhito Iwasa,Takao Yamada,Toshio Matsushita,Hiroyuki Kiyoku,Yasunobu Sugimoto,Tokuya Kozaki,Hitoshi Umemoto,Masahiko Sano,Kazuyuki Chocho +11 more
TL;DR: In this paper, a GaN multi-quantum well-structure laser diodes with Al0.14Ga0.86N/GaN modulation doped strained-layer superlattice cladding layers grown on an epitaxially laterally overgrown GaN (ELOG) substrate was demonstrated to have a lifetime of more than 1150 h under room-temperature continuous-wave operation.
Journal ArticleDOI
Room‐temperature continuous‐wave operation of InGaN multi‐quantum‐well structure laser diodes
Shuji Nakamura,Masayuki Senoh,Shinichi Nagahama,Naruhito Iwasa,Takao Yamada,Toshio Matsushita,Yasunobu Sugimoto,Hiroyuki Kiyoku +7 more
TL;DR: In this paper, a continuous-wave (cw) operation of InGaN multi-quantum-well structure laser diodes (LDs) was demonstrated at room temperature (RT).
Journal ArticleDOI
InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices
Shuji Nakamura,Masayuki Senoh,Shinichi Nagahama,Naruhito Iwasa,Takao Yamada,Toshio Matsushita,Hiroyuki Kiyoku,Yasunobu Sugimoto,Tokuya Kozaki,Hitoshi Umemoto,Masahiko Sano,Kazuyuki Chocho +11 more
TL;DR: In this article, a GaN multi-quantum-well-structure laser diodes with Al0.14Ga0.86N/GaN modulation doped strained-layer superlattice cladding layers grown on an epitaxially laterally overgrown GaN substrate were demonstrated to have an estimated lifetime of more than 10000 h under continuous-wave operation at 20° C.
Journal ArticleDOI
Continuous-wave operation of ingan/gan/algan-based laser diodes grown on gan substrates
Shuji Nakamura,Masayuki Senoh,Shinichi Nagahama,Naruhito Iwasa,Takao Yamada,Toshio Matsushita,Hiroyuki Kiyoku,Yasunobu Sugimoto,Tokuya Kozaki,Hitoshi Umemoto,Masahiko Sano,Kazuyuki Chocho +11 more
TL;DR: In this article, a GaN multi-quantum-well-structure laser diodes (LDs) were demonstrated on GaN substrates, and the LDs showed a small thermal resistance of 30 °C/W and a lifetime longer than 780 h despite a large threshold current density of 7 kA/cm2.