Journal ArticleDOI
Room‐temperature continuous‐wave operation of InGaN multi‐quantum‐well structure laser diodes
Shuji Nakamura,Masayuki Senoh,Shinichi Nagahama,Naruhito Iwasa,Takao Yamada,Toshio Matsushita,Yasunobu Sugimoto,Hiroyuki Kiyoku +7 more
TLDR
In this paper, a continuous-wave (cw) operation of InGaN multi-quantum-well structure laser diodes (LDs) was demonstrated at room temperature (RT).Abstract:
Continuous‐wave (cw) operation of InGaN multi‐quantum‐well structure laser diodes (LDs) was demonstrated at room temperature (RT). The threshold current and voltage of the LD were 130 mA and 8 V, respectively. The threshold carrier density was 9 kA/cm2. The lifetime of the LDs under RT cw operation was 1 s due to large heat generation. Mode hopping of the emission wavelength of the LDs was observed. The average wavelength drift due to temperature increase was 0.066 nm/K between 20 and 70 °C, because of the temperature dependence of the gain profile due to band‐gap narrowing of the InGaN active layer.read more
Citations
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Journal ArticleDOI
Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting
Michael R. Krames,O.B. Shchekin,Regina B. Mueller-Mach,Gerd O. Mueller,Ling Zhou,Gerard Harbers,M. G. Craford +6 more
TL;DR: In this paper, the status and future outlook of III-V compound semiconductor visible-spectrum light-emitting diodes (LEDs) are presented and light extraction techniques are reviewed.
Journal ArticleDOI
Gan : processing, defects, and devices
TL;DR: The role of extended and point defects, and key impurities such as C, O, and H, on the electrical and optical properties of GaN is reviewed in this article, along with the influence of process-induced or grown-in defects and impurities on the device physics.
Journal ArticleDOI
“S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells
Yong-Hoon Cho,G. H. Gainer,Arthur J. Fischer,J. J. Song,Stacia Keller,Umesh K. Mishra,Steven P. DenBaars +6 more
TL;DR: In this article, temperature-dependent time-integrated and time-resolved photoluminescence (PL) studies of InGaN/GaN multiple quantum wells (MQWs) grown by metalorganic chemical vapor deposition were performed.
Journal ArticleDOI
Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters
Isamu Akasaki,Hiroshi Amano +1 more
TL;DR: In this paper, the growth mechanism in heteroepitaxial growth of nitrides on highly mismatched substrates has been investigated and shown to yield high quality GaN, AlGaN, GaInN and their quantum well structures.
Patent
Nitride semiconductor device
Shinichi Nagahama,Masayuki Nichia Chemical Industries Ltd. Senoh,Shuji Nichia Chemical Industries Ltd. Nakamura +2 more
TL;DR: In this paper, the super lattice structure of a light emitting device (LED) was proposed to make working current and voltage of the device lower, resulting in realization of more efficient devices.