Y
Yasunori Taga
Researcher at Toyota
Publications - 291
Citations - 11079
Yasunori Taga is an academic researcher from Toyota. The author has contributed to research in topics: Thin film & Layer (electronics). The author has an hindex of 51, co-authored 291 publications receiving 10803 citations. Previous affiliations of Yasunori Taga include Nagoya University & Denso.
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Patent
Organic electroluminescent element, its manufacturing device, and electron device
Aketo Kunio,Hisayoshi Fujikawa,Atsushi Miura,Koji Noda,Yasunori Taga,篤志 三浦,康訓 多賀,邦夫 明渡,久喜 藤川,浩司 野田 +9 more
TL;DR: In this article, the amorphous carbon nitrite film has a dense film structure similar to an inorganic film while being flexible and having an stress relieving ability as an organic protective film.
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LP-5: Late-News Poster: Plasma-CVD SiNx / Plasma-Polymerized CNx:H Multi-layer Passivation Films for Organic Light Emitting Diodes
TL;DR: In this article, a plasma-CVD SiNx / plasma-polymerized CNx:H multi-layer films were developed to improve the longevity of passivated OLEDs for automobile applications.
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Thermogravimetric study of the sulfurization of TiO2 nanoparticles using CS2 and the decomposition of their sulfurized product
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Structures and properties of chromium thin films prepared by anisotropic‐emission‐effect sputter deposition
Yasuhito Gotoh,Yasunori Taga +1 more
TL;DR: Chromium thin films were prepared by a sputterdeposition system in which substrates were arranged semicircularly against a chromium target Structures and compositions of the films were investigated by x−ray diffractometer, x-ray photoelectron spectroscopy, electron probe microanalyzer, and scanning electron microscope as discussed by the authors.
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Geometrical factors of argon incorporation in SiO2 films deposited by ion beam sputtering
Tomoyoshi Motohiro,Yasunori Taga +1 more
TL;DR: In this article, the geometrical conditions for argon incorporation in SiO2 films prepared by ion beam sputter deposition were studied experimentally and it was found that sputter depositions with amounts of incorporated argon differing by a factor of 10 can be achieved under the same deposition rate.