To use solar irradiation or interior lighting efficiently, we sought a photocatalyst with high reactivity under visible light. Films and powders of TiO 2- x N x have revealed an improvement over titanium dioxide (TiO 2 ) under visible light (wavelength 2 has proven to be indispensable for band-gap narrowing and photocatalytic activity, as assessed by first-principles calculations and x-ray photoemission spectroscopy.

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Visible-Light Photocatalysis in Nitrogen-Doped Titanium Oxides

Titanium Dioxide Nanomaterials: Synthesis, Properties, Modifications, and Applications

[Yang, Hua Gui; Sun, Cheng Hua; Qiao, Shi Zhang; Liu, Gang; Smith, Sean Campbell; Lu, Gao Qing] Univ Queensland, ARC Ctr Excellence Funct Nanomat, Sch Engn, Brisbane, Qld 4072, Australia. [Yang, Hua Gui; Sun, Cheng Hua; Qiao, Shi Zhang; Liu, Gang; Smith, Sean Campbell; Lu, Gao Qing] Univ Queensland, Australian Inst Bioengn & Nanotechnol, Ctr Computat Mol Sci, Brisbane, Qld 4072, Australia. [Zou, Jin] Univ Queensland, Ctr Microscopy & Microanal, Brisbane, Qld 4072, Australia. [Zou, Jin] Univ Queensland, Sch Engn, Brisbane, Qld 4072, Australia. [Liu, Gang; Cheng, Hui Ming] Chinese Acad Sci, Met Res Inst, Shenyang Natl Lab Mat sci, Shenyang 110016, Peoples R China.;Lu, GQ (reprint author), Univ Queensland, ARC Ctr Excellence Funct Nanomat, Sch Engn, Brisbane, Qld 4072, Australia;s.qiao@uq.edu.au maxlu@uq.edu.au

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Anatase TiO(2) single crystals with a large percentage of reactive facets

Fujishima and Honda (1972) demonstrated the potential of titanium dioxide (TiO2) semiconductor materials to split water into hydrogen and oxygen in a photo-electrochemical cell. Their work triggered the development of semiconductor photocatalysis for a wide range of environmental and energy applications. One of the most significant scientific and commercial advances to date has been the development of visible light active (VLA) TiO2 photocatalytic materials. In this review, a background on TiO2 structure, properties and electronic properties in photocatalysis is presented. The development of different strategies to modify TiO2 for the utilization of visible light, including non metal and/or metal doping, dye sensitization and coupling semiconductors are discussed. Emphasis is given to the origin of visible light absorption and the reactive oxygen species generated, deduced by physicochemical and photoelectrochemical methods. Various applications of VLA TiO2, in terms of environmental remediation and in particular water treatment, disinfection and air purification, are illustrated. Comprehensive studies on the photocatalytic degradation of contaminants of emerging concern, including endocrine disrupting compounds, pharmaceuticals, pesticides, cyanotoxins and volatile organic compounds, with VLA TiO2 are discussed and compared to conventional UV-activated TiO2 nanomaterials. Recent advances in bacterial disinfection using VLA TiO2 are also reviewed. Issues concerning test protocols for real visible light activity and photocatalytic efficiencies with different light sources have been highlighted.

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A review on the visible light active titanium dioxide photocatalysts for environmental applications

We demonstrate very high efficiency electrophosphorescence in organic light-emitting devices employing a phosphorescent molecule doped into a wide energy gap host. Using bis(2-phenylpyridine)iridium(III) acetylacetonate [(ppy)2Ir(acac)] doped into 3-phenyl-4(1′-naphthyl)-5-phenyl-1,2,4-triazole, a maximum external quantum efficiency of (19.0±1.0)% and luminous power efficiency of (60±5) lm/W are achieved. The calculated internal quantum efficiency of (87±7)% is supported by the observed absence of thermally activated nonradiative loss in the photoluminescent efficiency of (ppy)2Ir(acac). Thus, very high external quantum efficiencies are due to the nearly 100% internal phosphorescence efficiency of (ppy)2Ir(acac) coupled with balanced hole and electron injection, and triplet exciton confinement within the light-emitting layer.

Nearly 100% internal phosphorescence efficiency in an organic light emitting device

The chemical structure of interfaces between aluminum (Al) and 8-hydroxyquinoline aluminum (Alq3) has been studied by X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (TOF-SIMS) New subpeaks of N1s and O1s in XPS spectra were observed after the deposition of Al on Alq3 The secondary ion intensity of quinoline in TOF-SIMS spectra was found to increase with Al coverage on Alq3 We, therefore, conclude that Alq3 is decomposed by the deposition of Al on Alq3, and that quinoline is formed at the Al/Alq3 interface

Chemical Structure of Aluminum/8-Hydroxyquinoline Aluminum Interface.

We report the influence of organic materials on the thermal stability and emission efficiency of organic light-emitting diode (OLED). To improve the device performance several hole transporting materials and emitting materials were developed based on triphenylamine and metal-chelate complex, respectively. The electroluminescent characteristics of the OLEDs are shown and discussed in view of properties of the materials. Control of light emission in the OLED with microcavity is also presented to suggest a new application.

Material Developments and Light Control in Organic Light-Emitting Diode

The objectives of this invention are to extend the range of choosing materials to use in the preparation of photopolymerizable compositions by providing a novel organic compound which absorbs a visible light; or to provide an organic material which is useful as host compound in organic electroluminescent devices, as well as its uses: The objectives are attainable by providing an aromatic tertiary amine compound bearing within the same molecule one or more specific atomic groups, a luminescent agent directed to use in organic electroluminescent devices comprising it, and an organic electroluminescent device using such amine compound, as well as its uses.

Amine compound and uses thereof

A ceramic substrate and a metallic layer formed thereon are bonded closely by means of a bonding layer formed between the ceramic substrate and the metallic layer. The ceramic substrate comprises either alumina or a ceramic containing alumina, and the metallic layer comprises either molybdenum (Mo) or an alloy composed of molybdenum (Mo) and at least one of titanium (Ti), zirconium (Zr) and niobium (Nb). The bonding layer comprises composite oxides of aluminum and at least one of titanium (Ti), zirconium (Zr) and niobium (Nb) and formed by either a process of (1) forming an intermediate layer comprising at least one of titanium (Ti), zirconium (Zr) and niobium (Nb) between the ceramic substrate and the metallic layer, and subjecting the laminated substance to a heat treatment to a cause a reaction between alumina and the intermediate layer; or (2) forming an alloy layer comprising an alloy of molybdenum (Mo) and at least one of titanium (Ti), zirconium (Zr) and niobium (Nb) directly on the ceramic substrate, and subjecting the laminated substance to a heat treatment to cause a reaction between alumina and at least one of titanium (Ti), zirconium (Zr) and niobium (Nb) contained in the alloy layer.

Ceramic substrate having a metallic layer thereon and a process for manufacturing the same

The effect of residual gas constituents and substrate temperature during Ti sputtering on the texture of TiN/Ti films deposited on SiO2/Si substrates has been investigated. The Ti (002) and TiN (111) preferred texture of the films deposited at 350 °C was found to be improved drastically by increasing the H2O partial pressure from 1×10−9 to 3×10−8 Torr. Both the Ti (002) and TiN (111) texture showed a similar H2O partial pressure and substrate temperature dependence because of the epitaxial transfer between these planes. The improved Ti (002) texture was attributed to the self-assembly of Ti atoms on the SiO2 surface, which had a low surface free energy due to the formation of surface OH groups. The AlSiCu/Ti/TiN/Ti layered film fabricated with the highly textured TiN/Ti film showed a strong Al (111) texture and had a smooth surface. Moreover, interconnects from this improved film had longer electromigration lifetimes. It was also confirmed that the increased H2O partial pressure (3×10−8 Torr) does not affect the contact resistance and junction leakage current of the AlSiCu/Ti/TiN/Ti/(n+Si or p+Si) contact system.

Yasunori Taga

Papers

Chemical Structure of Aluminum/8-Hydroxyquinoline Aluminum Interface.

Material Developments and Light Control in Organic Light-Emitting Diode

Amine compound and uses thereof

Ceramic substrate having a metallic layer thereon and a process for manufacturing the same

Effect of H2O partial pressure and temperature during Ti sputtering on texture and electromigration in AlSiCu/Ti/TiN/Ti metallization