Effects of spark plasma sintering temperature on densification, hardness and thermal conductivity of titanium carbide

The series of books represents a thorough treatment of ultra-high temperature materials with melting (sublimation or decomposition) points around or over 2500 °C. In the third volume are included physical (structural, thermal, electromagnetic, optical, mechanical, nuclear) and chemical (more than 1100 binary, ternary and multi-component systems, including those used for materials design, data on solid-state diffusion, wettability, interaction with chemicals, gases and aqueous solutions) properties of titanium monocarbide TiC1–x, vanadium monocarbide VC1–x and related 2D-molecular (graphene-like) carbide MXenes, discovered and developed only in the last decade. TiC1–x and VC1–x are also widely applied in the general technological and engineering practice in a wide range of temperatures as parts of highly hard materials (alloys) and special steels. This book will be of interest to researchers, engineers, postgraduate, graduate and undergraduate students alike. For the named materials, readers/users are provided with the full qualitative and quantitative assessment, which is based on the latest updates in the field of fundamental physics, chemistry, nanotechnology, materials science, design and engineering.

http://link.springer.com/content/pdf/10.1007/978-94-024-2039-5.pdf

Ultra-High Temperature Materials III: Refractory Carbides II (Ti and V Carbides)

Microstructure and thermomechanical characteristics of spark plasma sintered TiC ceramics doped with nano-sized WC

Spark plasma sintering of TiC–SiCw ceramics

Numerical modeling of heat transfer during spark plasma sintering of titanium carbide

Titanium carbide ceramics with different contents of boron or B 4 C were pressureless sintered at temperatures from 2100 °C to 2300 °C. Due to the removal of oxide impurities, the onset temperature for TiC grain growth was lowered to 2100 °C and near fully dense (>98%) TiC ceramics were obtained at 2200 °C. TiB 2 platelets and graphite flakes were formed during sintering process. They retard TiC grains from fast growth and reduced the entrapped pores in TiC grains. Therefore, TiC doped with boron or B 4 C could achieve higher relative density (>99.5%) than pure TiC (96.67%) at 2300 °C. Mechanical properties including Vickers’ hardness, fracture toughness and flexural strength were investigated. Highest fracture toughness (4.79 ± 0.50 MPa m 1/2 ) and flexural strength (552.6 ± 23.1 MPa) have been obtained when TiC mixed with B 4 C by the mass ratio of 100:5.11. The main toughening mechanisms include crack deflection and pull-out of TiB 2 platelets.

Pressureless sintering of titanium carbide doped with boron or boron carbide

Coating SiC on Zircaloy-4 by magnetron sputtering at room temperature

Immersion corrosion tests of TiC0.(8), TiC, TiC-20 vol% SiC, TIC-40 vol% SiC and SiC have been performed in molten FLiNaK salt at 800 degrees C for 25-200 h under argon cover gas. All of these five samples showed small mass loss and relatively good corrosion resistance in molten FLiNaK salt. The corrosion patterns of TiC0.8, TiC, TiC-20 vol% SiC and TiC-40 vol% SiC were inter-granular corrosion, which were attributed to the depletion of Ti along the grain boundaries. SiC exhibited a general corrosion process in which a carbon rich layer formed on the surface, resulting from the depletion of Si. The carbon-rich layer protected SiC against further corrosion, hence lowering the corrosion rate. The corrosion results of TiC-20% SiC and TiC-40% SiC revealed the corrosion resistance of TiC could be improved by adding SiC. And the contribution of SiC to better corrosion resistance has been elucidated. (C) 2017 Elsevier Ltd. All rights reserved.

Yifeng Gu

Papers

Pressureless sintering of titanium carbide doped with boron or boron carbide

Coating SiC on Zircaloy-4 by magnetron sputtering at room temperature

Corrosion behavior of TiC-SiC composite ceramics in molten FLiNaK salt

Anisotropic corrosion of Ti2AlC and Ti3AlC2 in supercritical water at 500 ºC