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Showing papers by "Yijie Huo published in 2018"


Patent
30 Nov 2018
TL;DR: In this article, the authors provided a pixel structure of a perpendicular cavity surface emitting laser and a making method thereof, which can effectively reduce energy consumption and manufacturing costs of the overall optics module set of structured light and encoding structured light under the same cost and energy consumption.
Abstract: The invention provides a pixel structure of a perpendicular cavity surface emitting laser and a making method thereof An emitting window is arranged on the perpendicular cavity surface emitting laser The pixel structure includes a plurality of clear zone sub pixels with light ray emergence and a plurality of dark zone sub pixels without light ray emergence, wherein the clear zone sub pixels andthe dark zone sub pixels are formed and arranged in a pattern in the emitting window Compared to existing structured light module set schemes and encoding structured light module set schemes, under the condition of maintaining a certain information density, the pixel structure of the perpendicular cavity surface emitting laser and making the method thereof can effectively reduced energy consumption and manufacturing costs of the overall optics module set of structured light and encoding structured light, or under the same cost and energy consumption, higher information density and recognizeddegree are achieved The pixel structure of the perpendicular cavity surface emitting laser and the making the method thereof have wide application prospects in the field of manufacture and application of the perpendicular cavity surface emitting laser

4 citations


Proceedings ArticleDOI
13 May 2018
TL;DR: In this paper, a nano-structured light-trapping Si SPAD with improved detection efficiency was presented without sacrificing jitter distribution or dark count rate, which can be adopted for CMOS-compatible SPAD image sensors and silicon photomultipliers.
Abstract: We present a nano-structured light-trapping Si SPAD with improved detection efficiency, without sacrificing jitter distribution or dark count rate. The design can be adopted for CMOS-compatible SPAD image sensors and silicon photomultipliers.