Matthew Morea

TL;DR: A CMOS-compatible, nanostructured, thin junction structure can make use of tailored light trapping to break the trade-off between photon detection efficiency and timing jitter in silicon single-photon avalanche detectors.

TL;DR: In this article, a nanopillar-based metamaterial composed of Ge and Al-doped ZnO (AZO) was used for beam steering in autonomous vehicles.

TL;DR: In this paper, the effect of surface passivation on pseudomorphic multiple-quantum-well photodetectors was studied and the activation energy of the photodeter was calculated.

TL;DR: In this article, the authors present highly strained germanium (Ge) LEDs driven by lateral p-i-n junctions and report the strain-induced enhancement of electroluminescence (EL) from Ge.

TL;DR: In this paper, an optimized gradient boron doping technique was used to enhance the photo-generated carrier collection efficiency and photo responsivity under the UV wavelength region, and the ultrathin p+-i-n junction showed an avalanche gain of 2800 and an ultra-low junction capacitance (sub pico-farad).