Yongqiang Yu

TL;DR: The generality of the above results suggests that the present monolayer graphene/germanium IR photodetector would have great potential for future optoelectronic device applications.

TL;DR: Finite element method (FEM) simulation results show that this novel nanostructure array/MLG heterojunction can trap UV photons effectively within the ZnONRs and suggest that this MLG film/ZnONR array Schottky junction UVPD will have potential application in future optoelectronic devices.

TL;DR: A silicon nanowire array/carbon quantum dot core-shell heterojunction photovoltaic device by directly coating Ag-assisted chemical-etched SiNW arrays with CQDs that could function as a high-performance self-driven visible light photodetector operating in a wide switching wavelength with good stability, high sensitivity, and fast response speed.

TL;DR: The resultant ultrathin Bi2 S3 -based photoconductor shows high sensitivity to visible-near infrared light from 405 to 780 nm with a high external photoresponsivity up to 4.4 A W(-1) and high detectivity of ≈10(11) Jones.

TL;DR: The device shows excellent performance in terms of wide response spectrum of UV–visible–NIR, high detectivity, and ultrafast response speed of ≈270 ns, unveiling the great potential for the heterojunction for high‐performance optoelectronic devices.