Y
Yoshimichi Ohki
Researcher at Waseda University
Publications - 701
Citations - 13927
Yoshimichi Ohki is an academic researcher from Waseda University. The author has contributed to research in topics: Dielectric & Space charge. The author has an hindex of 50, co-authored 684 publications receiving 12573 citations. Previous affiliations of Yoshimichi Ohki include Tokyo City University & National Institute of Advanced Industrial Science and Technology.
Papers
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A plasmonic photocatalyst consisting of silver nanoparticles embedded in titanium dioxide.
Koichi Awazu,Makoto Fujimaki,Carsten Rockstuhl,Junji Tominaga,Hirotaka Murakami,Yoshimichi Ohki,Naoya Yoshida,Toshiya Watanabe +7 more
TL;DR: The plasmonic photocatalysis will be of use as a high performance photocatalyst in nearly all current applications but will beof particular importance for applications in locations of minimal light exposure.
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Proposal of a multi-core model for polymer nanocomposite dielectrics
TL;DR: In this article, a multi-core model with the far-field effect was proposed to explain the dielectric and electrical insulation properties of polyamide layered silicate nanocomposites.
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Role of interface on the thermal conductivity of highly filled dielectric epoxy/AlN composites
TL;DR: In this article, the authors report on a systematic study of the effects of interface on the thermal conductivity of highly filled epoxy composites, where six kinds of surface treated and as received AlN particles are used as fillers.
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Photoluminescence from defect centers in high-purity silica glasses observed under 7.9-eV excitation
Hiroyuki Nishikawa,Taiji Shiroyama,Ryuta Nakamura,Yoshimichi Ohki,Kaya Nagasawa,Yoshimasa Hama +5 more
TL;DR: Results indicate that defects responsible for these luminescence bands are diamagnetic defects introduced during preparation or paramagnetic species induced during excitation.
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Correlation of the 5.0- and 7.6-eV absorption bands in SiO2 with oxygen vacancy
TL;DR: Observation of the decay lifetime of photoluminescence and calculations using the ab initio molecular-orbital program show that the 7.6-eV band is caused by a singlet-to-singlet transition, while the 5.0-ev band is cause by a singslet- to-triplet transition.