Building upon the success and relevance of the 2014 Magnetism Roadmap, this 2017 Magnetism Roadmap edition follows a similar general layout, even if its focus is naturally shifted, and a different group of experts and, thus, viewpoints are being collected and presented. More importantly, key developments have changed the research landscape in very relevant ways, so that a novel view onto some of the most crucial developments is warranted, and thus, this 2017 Magnetism Roadmap article is a timely endeavour. The change in landscape is hereby not exclusively scientific, but also reflects the magnetism related industrial application portfolio. Specifically, Hard Disk Drive technology, which still dominates digital storage and will continue to do so for many years, if not decades, has now limited its footprint in the scientific and research community, whereas significantly growing interest in magnetism and magnetic materials in relation to energy applications is noticeable, and other technological fields are emerging as well. Also, more and more work is occurring in which complex topologies of magnetically ordered states are being explored, hereby aiming at a technological utilization of the very theoretical concepts that were recognised by the 2016 Nobel Prize in Physics. Given this somewhat shifted scenario, it seemed appropriate to select topics for this Roadmap article that represent the three core pillars of magnetism, namely magnetic materials, magnetic phenomena and associated characterization techniques, as well as applications of magnetism. While many of the contributions in this Roadmap have clearly overlapping relevance in all three fields, their relative focus is mostly associated to one of the three pillars. In this way, the interconnecting roles of having suitable magnetic materials, understanding (and being able to characterize) the underlying physics of their behaviour and utilizing them for applications and devices is well illustrated, thus giving an accurate snapshot of the world of magnetism in 2017. The article consists of 14 sections, each written by an expert in the field and addressing a specific subject on two pages. Evidently, the depth at which each contribution can describe the subject matter is limited and a full review of their statuses, advances, challenges and perspectives cannot be fully accomplished. Also, magnetism, as a vibrant research field, is too diverse, so that a number of areas will not be adequately represented here, leaving space for further Roadmap editions in the future. However, this 2017 Magnetism Roadmap article can provide a frame that will enable the reader to judge where each subject and magnetism research field stands overall today and which directions it might take in the foreseeable future. The first material focused pillar of the 2017 Magnetism Roadmap contains five articles, which address the questions of atomic scale confinement, 2D, curved and topological magnetic materials, as well as materials exhibiting unconventional magnetic phase transitions. The second pillar also has five contributions, which are devoted to advances in magnetic characterization, magneto-optics and magneto-plasmonics, ultrafast magnetization dynamics and magnonic transport. The final and application focused pillar has four contributions, which present non-volatile memory technology, antiferromagnetic spintronics, as well as magnet technology for energy and bio-related applications. As a whole, the 2017 Magnetism Roadmap article, just as with its 2014 predecessor, is intended to act as a reference point and guideline for emerging research directions in modern magnetism.

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The 2017 Magnetism Roadmap

Recent studies in computer vision have shown that, while practically invisible to a human observer, skin color changes due to blood flow can be captured on face videos and, surprisingly, be used to estimate the heart rate (HR). While considerable progress has been made in the last few years, still many issues remain open. In particular, state of-the-art approaches are not robust enough to operate in natural conditions (e.g. in case of spontaneous movements, facial expressions, or illumination changes). Opposite to previous approaches that estimate the HR by processing all the skin pixels inside a fixed region of interest, we introduce a strategy to dynamically select face regions useful for robust HR estimation. Our approach, inspired by recent advances on matrix completion theory, allows us to predict the HR while simultaneously discover the best regions of the face to be used for estimation. Thorough experimental evaluation conducted on public benchmarks suggests that the proposed approach significantly outperforms state-of the-art HR estimation methods in naturalistic conditions.

/pdf/self-adaptive-matrix-completion-for-heart-rate-estimation-34gc3nht50.pdf

Self-Adaptive Matrix Completion for Heart Rate Estimation from Face Videos under Realistic Conditions

Graphene and related materials (GRMs) are promising candidates for the fabrication of resistive random access memories (RRAMs) Here, this emerging field is analyzed, classified, and evaluated, and the performance of a number of RRAM prototypes using GRMs is summarized Graphene oxide, amorphous carbon films, transition metal dichalcogenides, hexagonal boron nitride and black phosphorous can be used as resistive switching media, in which the switching can be governed either by the migration of intrinsic species or penetration of metallic ions from adjacent layers Graphene can be used as an electrode to provide flexibility and transparency, as well as an interface layer between the electrode and dielectric to block atomic diffusion, reduce power consumption, suppress surface effects, limit the number of conductive filaments in the dielectric, and improve device integration GRM-based RRAMs fit some non-volatile memory technological requirements, such as low operating voltages ( 10 years, endurance >109 cycles and power consumption ≈10 pJ per transition still remain a challenge More technology-oriented studies including reliability and variability analyses may lead to the development of GRMs-based RRAMs with realistic possibilities of commercialization

/pdf/graphene-and-related-materials-for-resistive-random-access-3ib3pr200c.pdf

Graphene and Related Materials for Resistive Random Access Memories

The laundry treating apparatus includes a door to open and close the introduction port about a first rotational or a second rotational axis which is different from first rotational axis A first switching unit is provided in the door to allow rotation of door about the first rotational axis, and a second switching unit is provided in the door to allow rotation of the door about the second rotational axis A lock fixes a position of at least one of the first switching unit or second switching unit when the door opens the introduction port As can be appreciated, the mechanism used for the laundry apparatus may be applicable to other home appliances or non-home appliances where two different rotational axes may be needed to open and close a door

Laundry treating apparatus

According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes a reference layer, a tunnel barrier layer, a storage layer. The storage layer includes a first region and a second region provided outside the first region to surround the first region, the second region including element included in the first region and another element being different from the element. The magnetoresistive element further includes a cap layer including a third region and a fourth region provided outside the third region to surround the third region, the fourth region including an element included in the third region and the another element.

Magnetoresistive element and method of manufacturing the same

The dependence of the write-error rate (WER) on the applied write voltage, write pulse width, and device size was examined in individual devices of a spin-transfer torque (STT) magnetic random-access memory (MRAM) 4 kbit chip. We present 10 ns switching data at the ${10^{ - 6}}$ error level for 655 devices, ranging in diameter from 50 nm to 11 nm, to make a statistically significant demonstration that a specific magnetic tunnel junction stack with perpendicular magnetic anisotropy is capable of delivering good write performance in junction diameters range from 50 to 11 nm. Furthermore, write-error-rate data on one 11 nm device down to an error rate of $7{\times}10^{ - 10}$ was demonstrated at 10 ns with a write current of $7.5\;\upmu{\rm A}$ , corresponding to a record low switching energy below 100 fJ.

Dependence of Voltage and Size on Write Error Rates in Spin-Transfer Torque Magnetic Random-Access Memory

Provided is a magnetic tunneling junction device including a first structure including a magnetic layer; a second structure including at least two extrinsic perpendicular magnetization structures, each including a magnetic layer and; a perpendicular magnetization inducing layer on the magnetic layer; and a tunnel barrier between the first and second structures.

Magnetic tunneling junction devices, memories, memory systems, and electronic devices

A magnetic memory layer and a magnetic memory device including the same, the magnetic memory layer including a first seed layer; a second seed layer on the first seed layer, the second seed layer grown according to a crystal direction with respect to a surface of the first seed layer; and a main magnetic layer on the second seed layer, the main magnetic layer grown according to the crystal direction with respect to a surface of the second seed layer.

Magnetic memory layer and magnetic memory device including the same

A method of providing a health service through a refrigerator that includes determining biometric information of a user using the refrigerator, searching for a user profile including biometric information corresponding to the determined biometric information from a user profile database stored in the refrigerator, and providing the user with a health service based on a user profile stored in the user profile database corresponding to the user

Method for providing health service and refrigerator therefor

This paper explores the feasibility of using signals acquired from a photoplethysmogram (PPG) sensor, typically used in mobile devices for heart rate monitoring, as a valid input signal for biometric authentication systems. Signals were acquired from 10 individuals, generating 708 independent datasets using the Texas Instruments AFE4490/4400 integrated analog front end for pulse oximeters. Results indicate successful identification of individuals with a false acceptance rate of 4.2% and a false rejection rate of 3.7%. Because PPG signal morphology is dependent on the physical state of an individual, biometric authentication cannot occur under stress or coercion which introduces a deviation in heart rate. This technique has demonstrated to be a feasible and simpler replacement to upcoming biometric advancements such as electrocardiogram-based authentication systems, but dependence on consistent measuring conditions limits the capabilities in mobile systems.

Young-Hyun Kim

Papers

Dependence of Voltage and Size on Write Error Rates in Spin-Transfer Torque Magnetic Random-Access Memory

Magnetic tunneling junction devices, memories, memory systems, and electronic devices

Magnetic memory layer and magnetic memory device including the same

Method for providing health service and refrigerator therefor

Photoplethysmography as a form of biometrie authentication