Daniel C. Worledge

TL;DR: Solid-state memory devices with all-electrical read and write operations might lead to faster, cheaper information storage.

TL;DR: A thermally assisted magnetoresistive random access memory device (TAS-MRAM) with reduced power for reading and writing was proposed in this article, where the storage and sense ferromagnetic layers include a non-magnetic material to reduce the magnetization of the respective layers.

TL;DR: In this paper, the basic physics of spin torque switching in 20"nm diameter magnetic tunnel junctions with perpendicular magnetic anisotropy materials were demonstrated, which clearly indicates the STT MRAM device itself may be suitable for integration at much higher densities than previously proven.

TL;DR: In this paper, a method for measuring magnetoresistance (MR) and resistance area product (RA) of unpatterned magnetic tunnel junction film stacks is presented. But this method requires placing the probes at the appropriate spacings, on the order of microns for typical applications.

TL;DR: In this article, a simple model of subvolume spin-torque-driven magnetic switching is presented to account for the experimental observations and the origin of the subvolume thermal excitation is traced to a competition between the macrospin fluctuation within a simple uniaxial anisotropy potential and that of thermal magnon excitation.