Guohan Hu

TL;DR: In this paper, the authors investigated spin torque switching in perpendicular magnetic tunnel junctions using Ta∣CoFeB∣MgO free layers and a synthetic antiferromagnet reference layer.

TL;DR: In this paper, the basic physics of spin torque switching in 20"nm diameter magnetic tunnel junctions with perpendicular magnetic anisotropy materials were demonstrated, which clearly indicates the STT MRAM device itself may be suitable for integration at much higher densities than previously proven.

TL;DR: In this article, a simple model of subvolume spin-torque-driven magnetic switching is presented to account for the experimental observations and the origin of the subvolume thermal excitation is traced to a competition between the macrospin fluctuation within a simple uniaxial anisotropy potential and that of thermal magnon excitation.

TL;DR: In this article, the authors present 10−ns switching data at the 10−6−1−1 error level for 655 devices, ranging in diameter from 50-nm to 11-nm, and demonstrate that a specific magnetic tunnel junction stack with perpendicular magnetic anisotropy is capable of delivering good write performance in junction diameters range from 50 to 11nm.