P
Philip L. Trouilloud
Researcher at IBM
Publications - 83
Citations - 4376
Philip L. Trouilloud is an academic researcher from IBM. The author has contributed to research in topics: Magnetization & Tunnel magnetoresistance. The author has an hindex of 27, co-authored 80 publications receiving 4154 citations. Previous affiliations of Philip L. Trouilloud include GlobalFoundries & Centre national de la recherche scientifique.
Papers
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Journal ArticleDOI
Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited)
Stuart S. P. Parkin,Kevin P. Roche,Mahesh G. Samant,P. M. Rice,Robert Beyers,Roy Edwin Scheuerlein,Eugene J. O'Sullivan,Stephen L. Brown,J. Bucchigano,D. W. Abraham,Yu Lu,M. Rooks,Philip L. Trouilloud,R. A. Wanner,William J. Gallagher +14 more
TL;DR: In this paper, exchange biased magnetic tunnel junction (MTJ) structures are shown to have useful properties for forming magnetic memory storage elements in a novel cross-point architecture, which exhibit very large magnetoresistive (MR) values exceeding 40% at room temperature, with specific resistance values ranging down to as little as ∼60 Ω(μm)2.
Journal ArticleDOI
Grain-boundary effects on the magnetoresistance properties of perovskite manganite films
Ayush Gupta,G. Q. Gong,Gang Xiao,P. R. Duncombe,P. Lecoeur,Philip L. Trouilloud,Y. Y. Wang,Vinayak P. Dravid,Jonathan Z. Sun +8 more
TL;DR: The role of grain boundaries in the magnetoresistance (MR) properties of the manganites has been investigated and the polycrystalline films show large MR over a wide temperature range down to 5 K.
PatentDOI
Thermally assisted MRAM
Anthony J. Annunziata,Anthony J. Annunziata,Philip L. Trouilloud,Daniel C. Worledge,Sébastien Bandiera,Lucien Lombard,Lucian Prejbeanu +6 more
TL;DR: A thermally assisted magnetoresistive random access memory device (TAS-MRAM) with reduced power for reading and writing was proposed in this article, where the storage and sense ferromagnetic layers include a non-magnetic material to reduce the magnetization of the respective layers.
Patent
Thermally-assisted magnetic random access memory (MRAM)
TL;DR: In this paper, the authors propose to select a storage cell by using a brief pulse of tunnelling current between the intersecting bit and word lines at that cell in order to provide sufficient Joule heating to facilitate a change in the magnetization state of its reversible magnetic layer, which preferably comprises a ferrimagnetic material.
Journal ArticleDOI
Thermally assisted magnetization reversal in submicron-sized magnetic thin films
Roger H. Koch,G. Grinstein,George A. Keefe,Yu Lu,Philip L. Trouilloud,William J. Gallagher,Stuart S. P. Parkin +6 more
TL;DR: In this paper, the authors measured the rate of thermally assisted magnetization reversal of submicron-sized magnetic thin films and showed that the reversal proceeds through the annihilation of two domain walls that move from opposite sides of the sample.