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Youngmin Park
Researcher at Qualcomm
Publications - 33
Citations - 483
Youngmin Park is an academic researcher from Qualcomm. The author has contributed to research in topics: Augmented reality & Video tracking. The author has an hindex of 11, co-authored 33 publications receiving 442 citations. Previous affiliations of Youngmin Park include Gwangju Institute of Science and Technology.
Papers
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Proceedings ArticleDOI
Multiple 3D Object tracking for augmented reality
TL;DR: This work presents a method that is able to track several 3D objects simultaneously, robustly, and accurately in real-time in order to take the advantages of the two approaches to object detection and tracking.
Proceedings ArticleDOI
Texture-less object tracking with online training using an RGB-D camera
TL;DR: A texture-less object detection and 3D tracking method which automatically extracts on the fly the information it needs from color images and the corresponding depth maps and automatically extracts a 3D model for the target from the depth information.
Proceedings ArticleDOI
ESM-Blur: Handling & rendering blur in 3D tracking and augmentation
TL;DR: An image formation model is introduced that explicitly considers the possibility of blur, and results in a generalization of the original ESM algorithm that allows to converge faster, more accurately and more robustly even under large amount of blur.
Proceedings ArticleDOI
Point-and-shoot for ubiquitous tagging on mobile phones
TL;DR: This work proposes a novel way to augment a real scene with minimalist user intervention on a mobile phone, and allows to share the augmentations and the required data over peer-to-peer communication to build a shared AR space on mobile phones.
Journal ArticleDOI
Improvement of memory performance by high temperature annealing of the Al2O3 blocking layer in a charge-trap type flash memory device
TL;DR: In this article, the effect of postdeposition annealing (PDA) of the Al2O3 blocking layer in a charge-trap type memory device is investigated. And the authors show that significant improvements are achieved by high temperature PDA at 1100 °C, achieving faster operation speed, good charge retention, and a wide program/erase window.