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Yu-Cheng Chang

Researcher at National Chiao Tung University

Publications -  15
Citations -  1312

Yu-Cheng Chang is an academic researcher from National Chiao Tung University. The author has contributed to research in topics: Dye-sensitized solar cell & Porphyrin. The author has an hindex of 11, co-authored 13 publications receiving 1213 citations.

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p-type Mesoscopic nickel oxide/organometallic perovskite heterojunction solar cells.

TL;DR: The replacement of the organic hole transport materials by a p-type metal oxide has the advantages to provide robust device architecture for further development of all-inorganic perovskite-based thin-film solar cells and tandem photovoltaics.
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A strategy to design highly efficient porphyrin sensitizers for dye-sensitized solar cells

TL;DR: Highly efficient porphyrin sensitizers with two phenyl groups at meso-positions of the macrocycle bearing two ortho-substituted long alkoxyl chains for dye-sensitized solar cells exhibit significantly enhanced photovoltaic performances.
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Enhanced light harvesting with π-conjugated cyclic aromatic hydrocarbons for porphyrin-sensitized solar cells

TL;DR: In this article, the photometric properties of dye-sensitized solar cells were investigated and the overall efficiencies of the corresponding devices show a trend LD4 > LD3p > LD2 > LD 3a > LD1.
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Highly efficient porphyrin-sensitized solar cells with enhanced light harvesting ability beyond 800 nm and efficiency exceeding 10%

TL;DR: In this article, a new porphyrin sensitizer, LD31, was designed based on a donor-πacceptor structure, in which an ethynyl-anthracenyl moiety was inserted between the dioctylaminophenyl group and the porphin core in order to extend the π-conjugation of the dye for improved light harvesting ability.
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Size-Controlled Anatase Titania Single Crystals with Octahedron-like Morphology for Dye-Sensitized Solar Cells

TL;DR: These HD devices showed greater V(OC) than devices of conventional nanoparticle (NP) type; the overall device performance of HD attained an efficiency of 10.2% power conversion at a total film thickness of 28 μm, which is superior to that of a NP-based reference device.