The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60meV) which could lead to lasing action based on exciton recombination even above room temperature. Even though research focusing on ZnO goes back many decades, the renewed interest is fueled by availability of high-quality substrates and reports of p-type conduction and ferromagnetic behavior when doped with transitions metals, both of which remain controversial. It is this renewed interest in ZnO which forms the basis of this review. As mentioned already, ZnO is not new to the semiconductor field, with studies of its lattice parameter dating back to 1935 by Bunn [Proc. Phys. Soc. London 47, 836 (1935)], studies of its vibrational properties with Raman scattering in 1966 by Damen et al. [Phys. Rev. 142, 570 (1966)], detailed optical studies in 1954 by Mollwo [Z. Angew. Phys. 6, 257 (1954)], and its growth by chemical-vapor transport in 1970 by Galli and Coker [Appl. Phys. ...

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A comprehensive review of zno materials and devices

We present a review of current research on the optical properties of ZnO nanostructures. We provide a brief introduction to different fabrication methods for various ZnO nanostructures and some general guidelines on how fabrication parameters (temperature, vapor-phase versus solution-phase deposition, etc.) affect their properties. A detailed discussion of photoluminescence, both in the UV region and in the visible spectral range, is provided. In addition, different gain (excitonic versus electron hole plasma) and feedback (random lasing versus individual nanostructures functioning as Fabry-Perot resonators) mechanisms for achieving stimulated emission are described. The factors affecting the achievement of stimulated emission are discussed, and the results of time-resolved studies of stimulated emission are summarized. Then, results of nonlinear optical studies, such as second-harmonic generation, are presented. Optical properties of doped ZnO nanostructures are also discussed, along with a concluding outlook for research into the optical properties of ZnO.

Optical properties of ZnO nanostructures.

The unique characteristics of ultrafast lasers, such as picosecond and femtosecond lasers, have opened up new avenues in materials processing that employ ultrashort pulse widths and extremely high peak intensities. Thus, ultrafast lasers are currently used widely for both fundamental research and practical applications. This review describes the characteristics of ultrafast laser processing and the recent advancements and applications of both surface and volume processing. Surface processing includes micromachining, micro- and nanostructuring, and nanoablation, while volume processing includes two-photon polymerization and three-dimensional (3D) processing within transparent materials. Commercial and industrial applications of ultrafast laser processing are also introduced, and a summary of the technology with future outlooks are also given. Scientists in Asia have reviewed the role of ultrafast lasers in materials processing. Koji Sugioka from RIKEN in Japan and Ya Cheng from the Shanghai Institute of Optics and Fine Mechanics in China describe how femtosecond and picosecond lasers can be used to perform useful tasks in both surface and volume processing. Such lasers can cut, drill and ablate a variety of materials with high precision, including metals, semiconductors, ceramics and glasses. They can also polymerize organic materials that contain a suitable photosensitizer and can three-dimensionally process inside transparent materials such as glass, and are already being used to fabricate medical stents, repair photomasks, drill ink-jet nozzles and pattern solar cells. The researchers also explain the characteristics of such lasers and the interaction of ultrashort, intense pulses of light with matter.

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Ultrafast lasers—reliable tools for advanced materials processing

ZnO nanostructures for optoelectronics: Material properties and device applications

The III-nitrides include the semiconductors AlN, GaN and InN, which have band gaps spanning the entire UV and visible ranges. Thin films of III-nitrides are used to make UV, violet, blue and green light-emitting diodes and lasers, as well as solar cells, high-electron mobility transistors (HEMTs) and other devices. However, the film growth process gives rise to unusually high strain and high defect densities, which can affect the device performance. X-ray diffraction is a popular, non-destructive technique used to characterize films and device structures, allowing improvements in device efficiencies to be made. It provides information on crystalline lattice parameters (from which strain and composition are determined), misorientation (from which defect types and densities may be deduced), crystallite size and microstrain, wafer bowing, residual stress, alloy ordering, phase separation (if present) along with film thicknesses and superlattice (quantum well) thicknesses, compositions and non-uniformities. These topics are reviewed, along with the basic principles of x-ray diffraction of thin films and areas of special current interest, such as analysis of non-polar, semipolar and cubic III-nitrides. A summary of useful values needed in calculations, including elastic constants and lattice parameters, is also given. Such topics are also likely to be relevant to other highly lattice-mismatched wurtzite-structure materials such as heteroepitaxial ZnO and ZnSe.

https://iopscience.iop.org/article/10.1088/0034-4885/72/3/036502/pdf

X-ray diffraction of III-nitrides

We report the laser-induced periodic surface structure (LIPSS) with periodicity about a quarter of the laser wavelength on unpolished diamond film treated by a P-polarized femtosecond laser. The short period LIPSS is parallel to the laser polarization and independent on the incidence angle. The LIPSS perpendicular to the laser polarization with periodicity shorter than a third of the laser wavelength slightly dependent on the incidence angle is also observed as well as the LIPSS perpendicular to the laser polarization with periodicity dependent on the incidence angle. The results are explained by interference of the incident laser and surface scattered wave related to the excited electrons during laser interactions with diamond, being in excellent agreement with a previously developed theory.

Femtosecond laser-induced periodic surface structure on diamond film

Indium-doped zinc oxide nanobelts

We report on photoluminescence in a ZnO/GaN heterostructure, which showed a donor–acceptor pair emission band at 3.270 eV and the longitudinal optical phonon replicas at 12 K. In comparison with p-type GaN, the positions of the peaks are redshifted. This may be associated with the variation of the residual strain in the GaN layer of the heterostructure. Using this heterostructure, near-ultraviolet light-emitting diodes were fabricated and their electroluminescence properties were characterized.

Optical properties of ZnO/GaN heterostructure and its near-ultraviolet light-emitting diode

Zn2SnO4 nanowires and Zn2SnO4 diameter-modulated (DM) nanowires were successfully synthesized, accompanied by the formation of ZnO nanowires, via the thermal evaporation of a mixture of ZnO and SnO2 powders, using gold as a catalyst. Their morphologies and structures were characterized by scanning electron microscopy, X-ray spectroscopy, and high-resolution transmission electron microscopy. The ZnO nanowires were single crystalline, with an axis of [0110], which is different from the conventional [0001] orientation and might be determined by the vapor components involved in the reaction. Zn2SnO4 nanowires and Zn2SnO4 DM nanowires were single crystalline, with [302] and [111] growth directions, respectively. A vapor−liquid−solid (VLS) growth mechanism is proposed, to interpret the growth of nanowires in the experiment. In regard to the formation of Zn2SnO4 DM nanowires, we suggest that the disturbance of vapor concentration is a major factor that changes the size of the catalyst alloy droplets and the gro...

Growth of Ternary Oxide Nanowires by Gold-Catalyzed Vapor-Phase Evaporation

The energy and charge transfer dynamics of directly coupled Au-CdSe hybrid nanocrystals have been studied using time-resolved photoluminescence (PL) techniques. The PL of such nanohybrids was found to be quenched dramatically compared to that of both CdSe quantum dots and mixtures of CdSe quantum dots with Au nanoparticles. Fluorescence decay curves of the Au-CdSe nanohybrids show three distinct decay channels with the fastest one associated with the transfer of electrons from the CdSe portion to the Au portion. The holes on the CdSe portion created by such charge transfer were then quickly taken away by the solution, while the electrons on the Au portion slowly leaked into the solution as well, thus serving as a reductant for redox reactions. Using a model reaction based on the reduction of methylene blue by the leaking electrons, our photocatalytic experiments indicate that the electrons can be temporarily retained in the Au portion (most likely at the Au-capping agent interface) for a dramatically long timescale, up to 100 min. Finally, by merging all of the observations in the time-resolved PL measurements, we were able to figure out a relatively complete picture of charge transfer and retention in the Au-CdSe nanohybrids. This picture is expected to guide researchers in designing modern photocatalysts and solar cells constructed from nanoscale metal-semiconductor hybrids.

Yuan Liao

Papers

Femtosecond laser-induced periodic surface structure on diamond film

Indium-doped zinc oxide nanobelts

Optical properties of ZnO/GaN heterostructure and its near-ultraviolet light-emitting diode

Growth of Ternary Oxide Nanowires by Gold-Catalyzed Vapor-Phase Evaporation

Charge transfer and retention in directly coupled Au-CdSe nanohybrids