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Yugang Zhou
Researcher at Nanjing University
Publications - 76
Citations - 2452
Yugang Zhou is an academic researcher from Nanjing University. The author has contributed to research in topics: High-electron-mobility transistor & Light-emitting diode. The author has an hindex of 21, co-authored 73 publications receiving 2205 citations. Previous affiliations of Yugang Zhou include Hong Kong University of Science and Technology.
Papers
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High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment
TL;DR: In this paper, a novel approach was proposed to fabricate high-performance enhancement mode (E-mode) AlGaN/GaN HEMTs based on fluoride-based plasma treatment of the gate region.
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Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode
TL;DR: In this paper, a method with an accurate control of threshold voltages of AlGaN/GaN high-electron mobility transistors (HEMTs) using a fluoride-based plasma treatment was presented.
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AlGaN-GaN double-channel HEMTs
TL;DR: In this article, the design, fabrication, and characterization of double-channel HEMTs are presented, where two carrier channels are formed in an AlGaN-GaN/AlGaN+GaN multilayer structure grown on a sapphire substrate.
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Growth of high quality GaN layers with AlN buffer on Si(111) substrates
P. Chen,Rui Zhang,Z.M. Zhao,Dongjuan Xi,Ben Shen,Z.Z. Chen,Yugang Zhou,S.Y. Xie,W.F. Lu,Y.D. Zheng +9 more
TL;DR: In this paper, high quality GaN layers were grown on Si(1) substrates using high-temperature-grown AlN as buffer layer by rapid thermal process low-pressure metalorganic chemical vapor deposition.
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AlGaN/GaN/InGaN/GaN DH-HEMTs with an InGaN notch for enhanced carrier confinement
TL;DR: In this paper, a 3-nm thin In/sub x/Ga/sub 1-x/N(x=0.1) layer was inserted into the conventional AlGaN/GaN HEMT structure to improve buffer isolation.