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Design Of Analog Cmos Integrated Circuits

IN view of the interest attaching to the vaporisation and diffusion of solids, the following observations may be worthy of record.

The Diffusion of Solids

https://tandfonline.com/doi/pdf/10.1080/14686996.2019.1599694

New development of atomic layer deposition: processes, methods and applications.

Modern civilization is related to the increased use of electric energy for industry production, human mobility, and comfortable living. Highly efficient and reliable power electronic systems, which convert and process electric energy from one form to the other, are critical for smart grid and renewable energy systems. The power semiconductor device, as the cornerstone technology in a power electronics system, plays a pivotal role in determining the system efficiency, size, and cost. Starting from the invention and commercialization of silicon bipolar junction transistor 60 years ago, a whole array of silicon power semiconductor devices have been developed and commercialized. These devices enable power electronics systems to reach ultrahigh efficiency and high-power capacity needed for various smart grid and renewable energy system applications such as photovoltaic (PV), wind, energy storage, electric vehicle (EV), flexible ac transmission system (FACTS), and high voltage dc (HVDC) transmission. In the last two decades, newer generations of power semiconductor devices based on wide bandgap (WBG) materials, such as SiC and GaN, were developed and commercialized further pushing the boundary of power semiconductor devices to higher voltages, higher frequencies, and higher temperatures. This paper reviews some of the major power semiconductor devices technologies and their potential impacts and roadmaps.

Power Semiconductor Devices for Smart Grid and Renewable Energy Systems

Wide-bandgap semiconductors are expected to be applied to solid-state lighting and power devices, supporting a future energy-saving society. While GaN-based white LEDs have rapidly become widespread in the lighting industry, SiC- and GaN-based power devices have not yet achieved their popular use, like GaN-based white LEDs for lighting, despite having reached the practical phase. What are the issues to be addressed for such power devices? In addition, other wide-bandgap semiconductors such as diamond and oxides are attracting focusing interest due to their promising functions especially for power-device applications. There, however, should be many unknown phenomena and problems in their defect, surface, and interface properties, which must be addressed to fully exploit their functions. In this review, issues of wide-bandgap semiconductors to be addressed in their basic properties are examined toward their ?full bloom?.

/pdf/award-for-best-review-paper-speech-30min-wide-bandgap-4ldqqxqgkh.pdf

[Award for Best Review Paper Speech](30min.)Wide-Bandgap Semiconductor Materials: For Their Full Bloom

As a promising ultra-wide bandgap semiconductor, the β-phase of Ga
 2
O
 3
 has attracted more and more interest in the field of power electronics due to its ultra-wide bandgap (4.8 eV), high theoretical breakdown electric field (8 MV/cm), and large Baliga's figure of merit, which is deemed as a potential candidate for next generation high-power electronics, including diodes, field effect transistors (FETs), etc. In this article, we introduce the basic material properties of Ga
 2
O
 3
, and review the recent progress and advances of β-Ga
 2
O
 3
 based metal-oxide-semiconductor field-effect transistors (MOSFETs). Due to the problematic p-type doping technology up to now, the enhancement-mode (E-mode) β-Ga
 2
O
 3
 FETs face more difficulties, compared with depletion mode (D-mode). This article focuses on reviewing the recent progress of E-mode Ga
 2
O
 3
 MOSFETs, summarizing and comparing various feasible solutions when p-type doping is absent. Furthermore, the device fabrication and performances of state-of-art β-Ga
 2
O
 3
 MOSFETs, including D-mode, E-mode, and planar/vertical structure are fully discussed and compared, as well as potential solutions to the challenges of Ga
 2
O
 3
 FETs.

Progress of Ultra-Wide Bandgap Ga 2 O 3 Semiconductor Materials in Power MOSFETs

A novel 4H-SiC trench metal–oxide–semiconductor field-effect transistor (MOSFET) with an L-shaped gate (LSG) is proposed and studied via numerical simulations in this letter. Adoption of an additional LSG region that surrounds the bottom corner of the trench allows the peak electric field in the SiO2 dielectric to be significantly relieved by charge compensation, and the device breakdown voltage can be greatly enhanced without causing significant degradation of the output characteristics. In high-voltage blocking states, the electric field at the bottom corner of the trench is weakened, which leads to improved device performance. The peak electric field value in the SiO2 dielectric decreases by 32.3% when compared with that of a conventional 4H-SiC trench MOSFET, while the breakdown voltage increases by 80.4%.

4H-SiC Trench MOSFET With L-Shaped Gate

In this paper, current conduction mechanisms in HfO2/β-Ga2O3 metal–oxide–semiconductor (MOS) capacitors under positive and negative biases are investigated using the current–voltage (I–V) measurements conducted at temperatures from 298 K to 378 K. The Schottky emission is dominant under positively biased electric fields of 0.37–2.19 MV cm−1, and the extracted Schottky barrier height ranged from 0.88 eV to 0.91 eV at various temperatures. The Poole–Frenkel emission dominates under negatively biased fields of 1.92–4.83 MV cm−1, and the trap energy levels are from 0.71 eV to 0.77 eV at various temperatures. The conduction band offset (ΔE c) of HfO2/β-Ga2O3 is extracted to be 1.31 ± 0.05 eV via x-ray photoelectron spectroscopy, while a large negative sheet charge density of 1.04 × 1013 cm−2 is induced at the oxide layer and/or HfO2/β-Ga2O3 interface. A low C–V hysteresis of 0.76 V, low interface state density (D it) close to 1 × 1012 eV−1 cm−2, and low leakage current density of 2.38 × 10−5 A cm−2 at a gate voltage of 7 V has been obtained, suggesting the great electrical properties of HfO2/β-Ga2O3 MOSCAP. According to the above analysis, ALD-HfO2 is an attractive candidate for high voltage β-Ga2O3 power devices.

https://iopscience.iop.org/article/10.1088/1361-6463/aaa60d/pdf

Leakage current conduction mechanisms and electrical properties of atomic-layer-deposited HfO2/Ga2O3 MOS capacitors

The interfacial characteristics of Al/Al2O3/ZnO/n-GaAs metal—oxide—semiconductor (MOS) capacitor are investigated. The results measured by X-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy (HRTEM) show that the presence of ZnO can effectively suppress the formations of oxides at the interface between the GaAs and gate dielectric and gain smooth interface. The ZnO-passivated GaAs MOS capacitor exhibits a very small hysteresis and frequency dispersion. Using the Terman method, the interface trap density is extracted from C–V curves. It is found that the ZnO layer can effectively improve the interface quality

https://iopscience.iop.org/article/10.1088/1674-1056/22/7/076701/pdf

Yimen Zhang

Papers

Progress of Ultra-Wide Bandgap Ga 2 O 3 Semiconductor Materials in Power MOSFETs

4H-SiC Trench MOSFET With L-Shaped Gate

Leakage current conduction mechanisms and electrical properties of atomic-layer-deposited HfO2/Ga2O3 MOS capacitors

Interfacial characteristics of Al/Al2O3/ZnO/n-GaAs MOS capacitor

Influence of oxidation temperature on the interfacial properties of n-type 4H-SiC MOS capacitors