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Yvonne Y. Gao

Researcher at Yale University

Publications -  30
Citations -  2127

Yvonne Y. Gao is an academic researcher from Yale University. The author has contributed to research in topics: Qubit & Quantum. The author has an hindex of 19, co-authored 29 publications receiving 1554 citations. Previous affiliations of Yvonne Y. Gao include Centre for Quantum Technologies & National University of Singapore.

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A Schrödinger cat living in two boxes

TL;DR: It is shown that the cat can be in two separate locations at the same time and the ability to manipulate such multicavity quantum states paves the way for logical operations between redundantly encoded qubits for fault-tolerant quantum computation and communication.
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Surface participation and dielectric loss in superconducting qubits

TL;DR: In this paper, the authors studied the energy relaxation times of transmon qubits in 3D cavities as a function of dielectric participation ratios of material surfaces and found an approximately proportional relation between the transmon relaxation rates and surface participation ratios.
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Measurement and control of quasiparticle dynamics in a superconducting qubit

TL;DR: Vortices can improve the performance of superconducting qubits by reducing the lifetimes of detrimental single-electron-like excitations known as quasiparticles, and provide a powerful characterization tool along the way.
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Deterministic teleportation of a quantum gate between two logical qubits

TL;DR: The teleportation of a controlled-NOT (CNOT) gate is experimentally demonstrated, which illustrates a compelling approach for implementing multi-qubit operations on logical qubits and indicates a promising path towards fault-tolerant quantum computation using a modular architecture.
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Surface participation and dielectric loss in superconducting qubits

TL;DR: In this paper, the authors study the energy relaxation times of transmon qubits in 3D cavities as a function of dielectric participation ratios of material surfaces and find an approximately proportional relation between the transmon relaxation rates and surface participation ratios.