The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60meV) which could lead to lasing action based on exciton recombination even above room temperature. Even though research focusing on ZnO goes back many decades, the renewed interest is fueled by availability of high-quality substrates and reports of p-type conduction and ferromagnetic behavior when doped with transitions metals, both of which remain controversial. It is this renewed interest in ZnO which forms the basis of this review. As mentioned already, ZnO is not new to the semiconductor field, with studies of its lattice parameter dating back to 1935 by Bunn [Proc. Phys. Soc. London 47, 836 (1935)], studies of its vibrational properties with Raman scattering in 1966 by Damen et al. [Phys. Rev. 142, 570 (1966)], detailed optical studies in 1954 by Mollwo [Z. Angew. Phys. 6, 257 (1954)], and its growth by chemical-vapor transport in 1970 by Galli and Coker [Appl. Phys. ...

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A comprehensive review of zno materials and devices

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Self-assembled monolayers of thiolates on metals as a form of nanotechnology.

The interest in nanoscale materials stems from the fact that new properties are acquired at this length scale and, equally important, that these properties * To whom correspondence should be addressed. Phone, 404-8940292; fax, 404-894-0294; e-mail, mostafa.el-sayed@ chemistry.gatech.edu. † Case Western Reserve UniversitysMillis 2258. ‡ Phone, 216-368-5918; fax, 216-368-3006; e-mail, burda@case.edu. § Georgia Institute of Technology. 1025 Chem. Rev. 2005, 105, 1025−1102

Chemistry and properties of nanocrystals of different shapes.

We have converted nanoscale mechanical energy into electrical energy by means of piezoelectric zinc oxide nanowire (NW) arrays. The aligned NWs are deflected with a conductive atomic force microscope tip in contact mode. The coupling of piezoelectric and semiconducting properties in zinc oxide creates a strain field and charge separation across the NW as a result of its bending. The rectifying characteristic of the Schottky barrier formed between the metal tip and the NW leads to electrical current generation. The efficiency of the NW-based piezoelectric power generator is estimated to be 17 to 30%. This approach has the potential of converting mechanical, vibrational, and/or hydraulic energy into electricity for powering nanodevices.

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Piezoelectric Nanogenerators Based on Zinc Oxide Nanowire Arrays

There is great interest in developing rechargeable lithium batteries with higher energy capacity and longer cycle life for applications in portable electronic devices, electric vehicles and implantable medical devices. Silicon is an attractive anode material for lithium batteries because it has a low discharge potential and the highest known theoretical charge capacity (4,200 mAh g(-1); ref. 2). Although this is more than ten times higher than existing graphite anodes and much larger than various nitride and oxide materials, silicon anodes have limited applications because silicon's volume changes by 400% upon insertion and extraction of lithium which results in pulverization and capacity fading. Here, we show that silicon nanowire battery electrodes circumvent these issues as they can accommodate large strain without pulverization, provide good electronic contact and conduction, and display short lithium insertion distances. We achieved the theoretical charge capacity for silicon anodes and maintained a discharge capacity close to 75% of this maximum, with little fading during cycling.

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High-performance lithium battery anodes using silicon nanowires

Ultralong beltlike (or ribbonlike) nanostructures (so-called nanobelts) were successfully synthesized for semiconducting oxides of zinc, tin, indium, cadmium, and gallium by simply evaporating the desired commercial metal oxide powders at high temperatures. The as-synthesized oxide nanobelts are pure, structurally uniform, and single crystalline, and most of them are free from defects and dislocations. They have a rectanglelike cross section with typical widths of 30 to 300 nanometers, width-to-thickness ratios of 5 to 10, and lengths of up to a few millimeters. The beltlike morphology appears to be a distinctive and common structural characteristic for the family of semiconducting oxides with cations of different valence states and materials of distinct crystallographic structures. The nanobelts could be an ideal system for fully understanding dimensionally confined transport phenomena in functional oxides and building functional devices along individual nanobelts.

https://science.sciencemag.org/content/sci/291/5510/1947.full.pdf

Nanobelts of Semiconducting Oxides

Functional oxides are the fundamentals of smart devices. This article reviews novel nanostructures of functional oxides, including nanobelts, nanowires, nanosheets, and nanodiskettes, that have been synthesized in the authors’ laboratory. Among the group of ZnO, SnO2, In2O3, Ga2O3, CdO, and PbO2, which belong to different crystallographic systems and structures, a generic nanobelt structure has been synthesized. The nanobelts are single crystalline and dislocation-free, and their surfaces are atomically flat. The oxides are semiconductors, and have been used for fabrication of nanodevices such as field-effect transistors and gas sensors. Taking SnO2 and SnO as examples, other types of novel nanostructures are illustrated. Their growth, phase transformation, and stability are discussed. The nanobelts and related nanostructures are a unique group that is likely to have important applications in electronic, optical, sensor, and optoelectronic nanodevices.

Novel Nanostructures of Functional Oxides Synthesized by Thermal Evaporation

Nanowires, sandwiched nanoribbons, and nanotubes of SnO2 are synthesized using elevated temperature synthesis techniques, and their structures are characterized in detail by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). In addition to the normal rutile structured SnO2, it has been possible to form an orthorhombic superlattice-like structure in the present study. The orthorhombic structure can form in a thin nanowire, coexist with the normal rutile structured SnO2 in a sandwiched nanoribbon, or occur in the form of nanotubes. This result is distinct from that for bulk SnO2 where pressures in excess of 150 kbar are required to form the orthorhombic form. The orientation relationship between the orthorhombic SnO2 and the rutile structured SnO2 is determined to be [001]o || [102]t and (100)o || (010)t for the nanowires and sandwiched nanoribbons, and [001]o || [3 ]t and (110)o || (451)t for the nanotubes. Although the growth direction of the rutile structured SnO2 nanowires i...

Tin Oxide Nanowires, Nanoribbons, and Nanotubes

The vapor-liquid-solid (VLS) process is a fundamental mechanism for the growth of nanowires, in which a small size (5-100 nm in diameter), high melting point metal (such as gold and iron) catalyst particle directs the nanowire's growth direction and defines the diameter of the crystalline nanowire. In this article, we show that the large size (5-50 Im in diameter), low melting point gallium droplets can be used as an effective catalyst for the large-scale growth of highly aligned, closely packed silica nanowire bunches. Unlike any previously observed results using gold or iron as catalyst, the gallium-catalyzed VLS growth exhibits many amazing growth phenomena. The silica nanowires tend to grow batch by batch. For each batch, numerous nanowires simultaneously nucleate, grow at nearly the same rate and direction, and simultaneously stop growing. The force between the batches periodically lifts the gallium catalyst upward, forming two different kinds of products on a silicon wafer and alumina substrate. On the silicon wafer, carrot-shaped tubes whose walls are composed of highly aligned silica nanowires with diameters of 15- 30 nm and length of 10-40 Im were obtained. On the alumina substrate, cometlike structures composed of highly oriented silica nanowires with diameters of 50-100 nm and length of 10-50 Im were formed. A growth model was proposed. The experimental results expand the VLS mechanism to a broader range.

Molten gallium as a catalyst for the large-scale growth of highly aligned silica nanowires.

The novel SnO diskettes have been synthesized by evaporating either SnO or SnO(2) powders at elevated temperature. Disregard the source material being SnO or SnO(2), the SnO diskettes are formed at a low-temperature region of 200-400 degrees C. Two types of diskette shapes have been identified: the solid-wheel shape with a drop center rim (type I) and the diskette with cone peak(s) and spiral steps (type II). The diskettes are determined to be tetragonal SnO structure (P4/nmm), with their flat surfaces being (001). The formation of the SnO diskettes is suggested to result from a solidification process. The structural evolution from SnO diskettes to SnO(2) diskettes has been investigated by oxidizing at different temperatures. The result shows that the phase transformation from SnO to SnO(2) occurs in two processes of decomposition and oxidization, and the decomposition process consists of two steps: first from SnO to Sn(3)O(4) and then from Sn(3)O(4) to SnO(2).

Z. R. Dai

Papers

Nanobelts of Semiconducting Oxides

Novel Nanostructures of Functional Oxides Synthesized by Thermal Evaporation

Tin Oxide Nanowires, Nanoribbons, and Nanotubes

Molten gallium as a catalyst for the large-scale growth of highly aligned silica nanowires.

Growth and structure evolution of novel tin oxide diskettes.