Two-dimensional materials are attractive for use in next-generation nanoelectronic devices because, compared to one-dimensional materials, it is relatively easy to fabricate complex structures from them. The most widely studied two-dimensional material is graphene, both because of its rich physics and its high mobility. However, pristine graphene does not have a bandgap, a property that is essential for many applications, including transistors. Engineering a graphene bandgap increases fabrication complexity and either reduces mobilities to the level of strained silicon films or requires high voltages. Although single layers of MoS(2) have a large intrinsic bandgap of 1.8 eV (ref. 16), previously reported mobilities in the 0.5-3 cm(2) V(-1) s(-1) range are too low for practical devices. Here, we use a halfnium oxide gate dielectric to demonstrate a room-temperature single-layer MoS(2) mobility of at least 200 cm(2) V(-1) s(-1), similar to that of graphene nanoribbons, and demonstrate transistors with room-temperature current on/off ratios of 1 × 10(8) and ultralow standby power dissipation. Because monolayer MoS(2) has a direct bandgap, it can be used to construct interband tunnel FETs, which offer lower power consumption than classical transistors. Monolayer MoS(2) could also complement graphene in applications that require thin transparent semiconductors, such as optoelectronics and energy harvesting.

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Single-layer MoS2 transistors

Novel physical phenomena can emerge in low-dimensional nanomaterials. Bulk MoS2, a prototypical metal dichalcogenide, is an indirect bandgap semiconductor with negligible photoluminescence. When the MoS2 crystal is thinned to monolayer, however, a strong photoluminescence emerges, indicating an indirect to direct bandgap transition in this d-electron system. This observation shows that quantum confinement in layered d-electron materials like MoS2 provides new opportunities for engineering the electronic structure of matter at the nanoscale.

Emerging Photoluminescence in Monolayer MoS2

Graphene-Like Two-Dimensional Materials

Large-area MoS(2) atomic layers are synthesized on SiO(2) substrates by chemical vapor deposition using MoO(3) and S powders as the reactants. Optical, microscopic and electrical measurements suggest that the synthetic process leads to the growth of MoS(2) monolayer. The TEM images verify that the synthesized MoS(2) sheets are highly crystalline.

Synthesis of Large‐Area MoS2 Atomic Layers with Chemical Vapor Deposition

Molybdenum disulphide is a promising non-precious catalyst for hydrogen evolution because it contains active edge sites and an inert basal plane. Introducing sulphur vacancies and strain now leads to activation and optimization of the basal plane. As a promising non-precious catalyst for the hydrogen evolution reaction (HER; refs 1,2,3,4,5), molybdenum disulphide (MoS2) is known to contain active edge sites and an inert basal plane1,6,7,8. Activating the MoS2 basal plane could further enhance its HER activity but is not often a strategy for doing so. Herein, we report the first activation and optimization of the basal plane of monolayer 2H-MoS2 for HER by introducing sulphur (S) vacancies and strain. Our theoretical and experimental results show that the S-vacancies are new catalytic sites in the basal plane, where gap states around the Fermi level allow hydrogen to bind directly to exposed Mo atoms. The hydrogen adsorption free energy (ΔGH) can be further manipulated by straining the surface with S-vacancies, which fine-tunes the catalytic activity. Proper combinations of S-vacancy and strain yield the optimal ΔGH = 0 eV, which allows us to achieve the highest intrinsic HER activity among molybdenum-sulphide-based catalysts.

Activating and optimizing MoS2 basal planes for hydrogen evolution through the formation of strained sulphur vacancies

We report on the synthesis, structure, and self-assembly of single-wall subnanometer-diameter molybdenum disulfide tubes. The nanotubes are up to hundreds of micrometers long and display diverse self-assembly properties on different length scales, ranging from twisted bundles to regularly shaped "furry" forms. The bundles, which contain interstitial iodine, can be readily disassembled into individual molybdenum disulfide nanotubes. The synthesis was performed using a novel type of catalyzed transport reaction including C(60) as a growth promoter.

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Self-assembly of subnanometer-diameter single-wall MoS2 nanotubes.

New crystal structures of ws2 : microtubes, ribbons, and ropes

We report on the existence of MoS2 hollowed microtubes, several mm in lengths and less than 0.1 μm wall thickness, grown from the vapor phase. Scanning electron microscopy studies reveal that instability of thin weakly bonded sheets against folding causes the tube growth directly or indirectly beyond the formation of turbulent gas flow. Electron diffraction of a single tube wall proves a parallel growth mode of successive layers while the crystal lattices of both tube walls are mutually rotated. A spiral growth mode is proposed.

Z. Skraba

Papers

Self-assembly of subnanometer-diameter single-wall MoS2 nanotubes.

New crystal structures of ws2 : microtubes, ribbons, and ropes

MoS2 as microtubes

Structural Stabilization of New Compounds: MoS2 and WS2 Micro‐ and Nanotubes Alloyed with Gold and Silver

Stabilization of the rhombohedral polytype in MoS2 and WS2 microtubes : TEM and AFM study