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Zehua Huang

Researcher at University of Electronic Science and Technology of China

Publications -  25
Citations -  463

Zehua Huang is an academic researcher from University of Electronic Science and Technology of China. The author has contributed to research in topics: Graphene & Thin film. The author has an hindex of 9, co-authored 22 publications receiving 310 citations.

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Graphene/Organic Semiconductor Heterojunction Phototransistors with Broadband and Bi-directional Photoresponse.

TL;DR: For the first time, a bi-directional (positive and negative) photoresponse is demonstrated at different wavelengths, due to the opposite charge transfer direction of the photoexcited carriers enforced by the unique band alignment.
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High thermochromic performance of Fe/Mg co-doped VO2 thin films for smart window applications

TL;DR: In this paper, Fe/Mg co-doping is proposed for the first time to improve the thermochromic performance of vanadium dioxide (VO2) films.
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Enhanced Performance of Wideband Room Temperature Photodetector Based on Cd3As2 Thin Film/Pentacene Heterojunction

TL;DR: In this article, a wide-band photodetector based on heterojunction of Cd3As2 thin film and pentacene for the first time was demonstrated, which can detect the radiation wavelength from 450 nm to 10600 nm at room temperature.
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Al-doped VO2 films as smart window coatings: Reduced phase transition temperature and improved thermochromic performance

TL;DR: In this paper, the authors investigated Al-doped VO 2 films as thermochromic coatings on glass substrates by DC magnetron sputtering and found that adding Al 3+ ions into VO 2 can generate groups of polygonal grains and nanowire clusters, apart from routinely reducing the valence and decreasing the grain size.
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THz Transmittance and Electrical Properties Tuning across IMT in Vanadium Dioxide Films by Al Doping

TL;DR: Al-doped VO2 films were prepared on (111) directional silicon substrate, which rapidly counteracted the absorption peak and exhibited widely modulating properties and a valence reduction of the vanadium element, which was caused by the valence difference between V and Al atoms.