The invention discloses an integrated semiconductor laser of a 2-micrometer single-mode high-power GaSb-based metal grating master oscillator power amplifier and a fabrication method of the integrated semiconductor laser. The semiconductor laser comprises a substrate, an epitaxial structure, a gain amplification region, a master oscillator region, a metal grating region and light limitation grooves, wherein the epitaxial structure is grown on the substrate and comprises an N-type lower contact layer, an N-type lower limitation layer, a lower waveguide layer, an active region, an upper waveguide layer, a P-type upper limitation layer and a P-type upper contact layer from bottom to top, the gain amplification region is arranged at the front part, namely an emergent light part of the semiconductor laser and is of an isosceles trapezoid structure formed by downwards etching the P-type upper contact layer, the master oscillator region is arranged at the rear part of the gain amplification region and is of a ridged waveguide structure formed by downwards etching the P-type upper contact layer and the P-type upper limitation layer, the metal grating region is arranged at the rear part of the master oscillator region and is of a periodic grating structure formed on the surface of the upper waveguide layer, the light limitation grooves are symmetrically arranged at the two sides of ridged waveguide structure, and the light limitation grooves and the ridged waveguide structure are arranged in an inclining manner.

Fabrication method for integrated semiconductor laser

The invention provides a 1.8-4micron high-power semiconductor laser and a preparation method thereof and relates to the technical field of mid-infrared lasers. The laser comprises an active region (comprising an InGaAsSb quantum well or an AlGaInAsSb barrier layer), a non-doped AlGaInAsSb upper waveguide layer, an insulating layer and the like. Meanwhile, a ridge broadside waveguide is adopted; the waveguide is etched to the upper waveguide layer; an electrical injection window is etched in the insulating layer to form a current injection area; a ground and polished surface is processed by a dilute hydrochloric acid solution before an n-surface electrode is deposited; and furthermore, double paths of protective gases of a formic acid and nitrogen are introduced when the laser is sintered, so that the laser can obtain high power output, the phenomena of cavities in solder and creeping In on a device are avoided, the stability of the device is improved and the lifetime of the device is prolonged.

1.8-4micron high-power semiconductor laser and preparation method thereof

The invention discloses an antimonide quantum-dot interband cascading laser. The laser is prepared by the steps of preparing a lower limit layer, a lower waveguide layer, a cascading region, an upper waveguide layer, an upper limit layer and an InAs contact layer on a GaSb substrate in sequence. The laser provided by the invention takes a quantum-dot active region as the active region of the interband cascade laser; based on the characteristics of the quantum-dot material, the limitation and utilization on current carriers is carried out effectively; and therefore, the interband cascading laser has the characteristics of lower threshold value current density and wide gain spectrum, so that the performance of the interband cascading laser is effectively improved.

Quantum-dot interband cascading laser

A mid-infrared superlattice interband transition laser comprises a substrate which is an N-type Ga-Sb material; a lower confinement layer prepared on the substrate and being N-type doped AlGaAsSb; a lower waveguide layer prepared on the lower confinement layer and being undoped AlGaInAsSb; an active region, prepared on the lower waveguide layer, is a superlattice interband transition active region, the active region comprising: an InAs/AlSb superlattice transporting electrons; and InGaSb/AlSb superlattices transporting holes; an upper waveguide layer prepared on the active region and being undoped AlGaInAsSb; An upper confinement layer prepared on the upper waveguide layer and doped with P-type AlGaAsSb; and an upper contact layer prepared on the upper confinement layer and doped with P-type GaSb; The laser can alleviate the problem that the long wavelength band of the quantum well laser is easy to be restricted by Auger recombination, and the technical problem that the gain of the interband cascaded laser is small due to adopting the W-type active region structure, and the electron and hole confinement effect of the laser is not strong, so that it is difficult to realize short wavelength operation and the like

Mid-infrared superlattice interband transition laser and preparation method thereof

The invention discloses a high power distributed feedback semiconductor laser with modulated surface and side dielectric gratings, and belongs to the technical field of semiconductor lasers. The existing DFB-LD fails to adequately balance wavelength stability, line width, and output power. According to the invention, the high power distributed feedback semiconductor laser with modulated surface and side dielectric gratings belongs to the edge emitting LD, a lower electrode is located on the lower surface of a base strip, a ridge strip is arranged on the upper surface of the base strip, an upper electrode is arranged on the upper surface of the ridge strip, the base strip comprises a substrate, an N-confining layer, an N-waveguide layer, an active area and a P-waveguide layer from bottom to top, the ridge strip comprises a P-confining layer and a heavily doped contact layer from bottom to top, and the ridge strip is narrower than the base strip; and the high power distributed feedback semiconductor laser is characterized in that the ridge strip belongs to the wide strip type, the upper electrode is shorter than the ridge strip in the longitudinal direction of the ridge strip, surface dielectric gratings are etched on two ends of the upper surface of the ridge strip, and side dielectric gratings are etched on two sides of the ridge strip. The high power distributed feedback semiconductor laser has a temperature drift coefficient of 0.062 nm/K, a line width of 0.8 nm and a continuous output power of 2W.

High power distributed feedback semiconductor laser with modulated surface and side dielectric gratings

The invention discloses an InSb/GaSb quantum dot structure apparatus. The InSb/GaSb quantum dot structure apparatus comprises a GaSb substrate (101) which is used for supporting a whole two-point material structure. An extension structure which grows on the GaSb substrate sequentially comprises a GaSb lower buffer layer (102), a lattice-matched AlGaInAsSb lower barrier layer (103), a GaSb upper buffer layer (104), an InSb quantum dot layer (105), a GaSb protective layer (106), a lattice-matched AlGaInAsSb upper barrier layer (107), and a GaSb covering layer (108). The invention further discloses an MBE growing method of the quantum dot structure apparatus. According to the InSb/GaSb quantum dot structure apparatus and the growing method, InSb quantum dots can be prepared on the GaSb substrate, and the InSb/GaSb quantum dot structure apparatus and the growing method are applied to the design and the extension growing of an active region structure of a semiconductor photoelectric device which emits single photons in a mid-infrared wave section.

InSb/GaSb quantum dot structure apparatus and growing method

Dual-wavelength antimonide strained quantum well semiconductor laser and preparation method thereof

The invention provides an interband cascade laser and a manufacturing method of the interband cascade laser The interband cascade laser is characterized in that an InAs layer is inserted into an active area InGaSb to form a hole potential barrier to enable a hole wave function to be expanded towards the two sides, and therefore overlapping of the hole wave function and an electron wave function is increased The overlapping degree of the hole wave function and the electron wave function is 15407% without the effect of an external field and is 503% higher than the overlapping degree of a traditional InAs/InGaSb/InAs W-type quantum well external-field-free wave function, and therefore gains of the active area are increased

Interband cascade laser and manufacturing method of interband cascade laser

The invention discloses an interband cascade laser of a W-type active region structure. According to the laser, a lower InAs/AlSb limitation layer, a lower GsSb waveguide layer, a W-type active region, an upper GaSb waveguide layer, an upper InAs/AlSb limitation layer and an InAs contact layer are prepared on a GaSb substrate in sequence. The W-type active region is composed of an InAs/AlSb electron injection region, an InAs/AlSb hole injection region and an InAs/Ga InSb/AlSb/GaInSb/InAs W-type quantum well. The interband cascade laser is formed by combining the W-type active region structure (InAs/Ga InSb/AlSb/GaInSb/InAs) and an interband cascade laser structure. According to the interband cascade laser, gain of the active region and performance of the laser are improved by increasing electron and hole wave function overlap in the active region.

Zhang Yu

Papers

InSb/GaSb quantum dot structure apparatus and growing method

Dual-wavelength antimonide strained quantum well semiconductor laser and preparation method thereof

Interband cascade laser and manufacturing method of interband cascade laser

Interband cascade laser of W-type active region structure