Semiconductor quantum dots (QDs) of various material systems are being heavily researched for the development of solid state single photon emitters, which are required for optical quantum computing and related technologies such as quantum key distribution and quantum metrology. In this review article, we give a broad spectrum overview of the QD-based single photon emitters developed to date, from the telecommunication bands in the IR to the deep UV.

Progress in quantum-dot single photon sources for quantum information technologies: A broad spectrum overview

III‐V antimonide nanowires are among the most interesting semiconductors for transport physics, nanoelectronics and long-wavelength optoelectronic devices due to their optimal material properties. In order to investigate their complex crystal structure evolution, faceting and composition, we report a combined scanning electron microscopy (SEM), transmission electron microscopy (TEM), and scanning tunneling microscopy (STM) study of gold-nucleated ternary InAs/InAs1 xSbx nanowire heterostructures grown by molecular beam epitaxy. SEM showed the general morphology and faceting, TEM revealed the internal crystal structure and ternary compositions, while STM was successfully applied to characterize the oxide-free nanowire sidewalls, in terms of nanofaceting morphology, atomic structure and surface composition. The complementary use of these techniques allows for correlation of the morphological and structural properties of the nanowires with the amount of Sb incorporated during growth. The addition of even a minute amount of Sb to InAs changes the crystal structure from perfect wurtzite to perfect zinc blende, via intermediate stacking fault and pseudo-periodic twinning regimes. Moreover, the addition of Sb during the axial growth of InAs/InAs1 xSbx heterostructure nanowires causes a significant conformal lateral overgrowth on both segments, leading to the spontaneous formation of a core‐shell structure, with an Sb-rich shell.

https://iopscience.iop.org/article/10.1088/0957-4484/23/9/095702/pdf

Faceting, composition and crystal phase evolution in III-V antimonide nanowire heterostructures revealed by combining microscopy techniques

Here we review the recent research activities on the epitaxial growth of semiconductor nanowires (NWs) on graphene substrates. Semiconductor NWs with quasi one-dimensional structure have become an active research field due to their various interesting physical properties and potentials for future electronic and optoelectronic device applications, such as transistors, sensors, solar cells, light emitting diodes, and lasers. At almost the same time graphene, a two-dimensional material made of carbon, was discovered and has gained an ever increasing interest during the last few years owing to its remarkable properties, including excellent electrical conductivity, optical transparency, and mechanical strength and flexibility. A hybrid structure by epitaxially growing semiconductor NWs on graphene could provide a new avenue for the development of future advanced NW-based flexible electronic and optoelectronic devices. We address the challenges for the growth of semiconductor NWs on graphene, with a special focus on the III–V semiconductors, and highlight some potential applications of the NW/graphene hybrid system. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.201308010

Advances in semiconductor nanowire growth on graphene

We report on the recent progress in electronic applications using III–V nanowires (NWs) on Si substrates using the selective-area growth method. This method could align vertical III–V NWs on Si under specific growth conditions. Detailed studies of the III–V NW/Si heterointerface showed the possibility of achieving coherent growth regardless of misfit dislocations in the III–V/Si heterojunction. The vertical III–V NWs grown using selective-area growth were utilized for high performance vertical field-effect transistors (FETs). Furthermore, III–V NW/Si heterointerfaces with fewer misfit dislocations provided us with a unique band discontinuity with a new functionality that can be used for the application of tunnel diodes and tunnel FETs. These demonstrations could open the door to a new approach for creating low power switches using III–V NWs as building-blocks of future nanometre-scaled electronic circuits on Si platforms.

/pdf/recent-progress-in-integration-of-iii-v-nanowire-transistors-h3nid8ny3k.pdf

Recent progress in integration of III?V nanowire transistors on Si substrate by selective-area growth

Reference EPFL-CONF-163061 URL: http://tdls.conncoll.edu/2005/index.html Record created on 2011-02-04, modified on 2017-05-10

Novel Helmholtz-based photoacoustic sensor for trace gas detection at ppm level using GaInAsSb/GaAlAsSb DFB lasers

We report a new type of single InAs quantum dot (QD) embedded at the junction of gold-free branched GaAs/AlGaAs nanowire (NW) grown on silicon substrate. The photoluminescence intensity of such QD is ~20 times stronger than that from randomly distributed QD grown on the facet of straight NW. Sharp excitonic emission is observed at 4.2 K with a line width of 101 μeV and a vanishing two-photon emission probability of g(2)(0) = 0.031(2). This new nanostructure may open new ways for designing novel quantum optoelectronic devices.

Single InAs Quantum Dot Grown at the Junction of Branched Gold-Free GaAs Nanowire

The invention provides an InAs/GaSb superlattice infrared photoelectric detector and a manufacturing method thereof. The InAs/GaSb superlattice infrared photoelectric detector comprises a substrate, an epitaxy structure deposited on the substrate, an upper metal electrode formed above steps, a lower metal electrode formed under the steps and a passivation layer, wherein the epitaxy structure comprises an n-type doping buffer layer, an n-type electrode contact layer, a barrier layer, an intrinsic absorption layer, a p-type electrode contact layer and a cover layer, the steps are formed on two sides of the epitaxy structure through etching, the intrinsic absorption layer is composed of a plurality of periodical InAs/InSb/GaSb/ InSb superlattice structures. In the InAs/GaSb superlattice infrared photoelectric detector, InSb is respectively inserted into two interfaces of each superlattice period of the intrinsic absorption layer to form strained superlattices, the stress between the superlattices and the substrate is effectively balanced, the material growing quality is improved, and accordingly the photoelectric performance of the detector is improved.

InAs/GaSb superlattice infrared photoelectric detector and manufacturing method thereof

InAs/AlSb deep quantum well (QW) structures with high electron mobility were grown by molecular beam epitaxy (MBE) on semi-insulating GaAs substrates. AlSb and Al0.75Ga0.25Sb buffer layers were grown to accommodate the lattice mismatch (7%) between the InAs/AlSb QW active region and GaAs substrate. Transmission electron microscopy shows abrupt interface and atomic force microscopy measurements display smooth surface morphology. Growth conditions of AlSb and Al0.75Ga0.25Sb buffer were optimized. Al0.75Ga0.25Sb is better than AlSb as a buffer layer as indicated. The sample with optimal Al0.75Ga0.25Sb buffer layer shows a smooth surface morphology with root-mean-square roughness of 6.67 A. The electron mobility has reached as high as 27 000 cm2/Vs with a sheet density of 4.54 × 1011/cm2 at room temperature.

Molecular beam epitaxy growth of high electron mobility InAs/AlSb deep quantum well structure

GaSb-based 2.4 μm InGaAsSb/AlGaAsSb type-I quantum-well laser diode is fabricated. The laser is designed consisting of three In0.35Ga0.65As0.1Sb0.9/Al0.35Ga0.65As0.02Sb0.98 quantum wells with 1% compressive strain located in the central part of an undoped Al0.35Ga0.65As0.02Sb0.98 waveguide layer. The output power of the laser with a 50-μm-wide 1-mm-long cavity is 28mW, and the threshold current density is 400 A/cm2 under continuous wave operation mode at room temperature.

https://iopscience.iop.org/article/10.1088/0256-307X/31/5/054204/pdf

Room-Temperature Operation of 2.4 μm InGaAsSb/AlGaAsSb Quantum-Well Laser Diodes with Low-Threshold Current Density

The invention discloses an InSb/GaSb quantum dot structure apparatus. The InSb/GaSb quantum dot structure apparatus comprises a GaSb substrate (101) which is used for supporting a whole two-point material structure. An extension structure which grows on the GaSb substrate sequentially comprises a GaSb lower buffer layer (102), a lattice-matched AlGaInAsSb lower barrier layer (103), a GaSb upper buffer layer (104), an InSb quantum dot layer (105), a GaSb protective layer (106), a lattice-matched AlGaInAsSb upper barrier layer (107), and a GaSb covering layer (108). The invention further discloses an MBE growing method of the quantum dot structure apparatus. According to the InSb/GaSb quantum dot structure apparatus and the growing method, InSb quantum dots can be prepared on the GaSb substrate, and the InSb/GaSb quantum dot structure apparatus and the growing method are applied to the design and the extension growing of an active region structure of a semiconductor photoelectric device which emits single photons in a mid-infrared wave section.

Juan Wang

Papers

Single InAs Quantum Dot Grown at the Junction of Branched Gold-Free GaAs Nanowire

InAs/GaSb superlattice infrared photoelectric detector and manufacturing method thereof

Molecular beam epitaxy growth of high electron mobility InAs/AlSb deep quantum well structure

Room-Temperature Operation of 2.4 μm InGaAsSb/AlGaAsSb Quantum-Well Laser Diodes with Low-Threshold Current Density

InSb/GaSb quantum dot structure apparatus and growing method