Reference EPFL-CONF-163061 URL: http://tdls.conncoll.edu/2005/index.html Record created on 2011-02-04, modified on 2017-05-10

Novel Helmholtz-based photoacoustic sensor for trace gas detection at ppm level using GaInAsSb/GaAlAsSb DFB lasers

Embodiments of strain-balanced superlattice infrared detector devices and their fabrication are disclosed. In one embodiment, an infrared detector device includes a first contact layer, and absorber superlattice region, a wider gap unipolar barrier region, and a second contact layer. The absorber superlattice region has a period defined by a first InAs layer, strain-balancing structure, a second InAs layer, and an InAsSb layer. The strain-balancing structure comprises an arbitrary alloy layer sequence containing at least one constituent element of aluminum or phosphor, e.g., InGaAs, AlInAs InAsP. In another embodiment, the absorber superlattice region has a period defined by a first InAs layer, first strain-balancing structure, a second InAs layer, a first GaSb layer, a second strain-balancing structure, and a second GaSb layer. The first strain-balancing structure includes at least one constituent element of aluminum or phosphor, e.g., InGaAs, AlInAs InAsP. The second strain-balancing structure includes GaInSb and GaSb.

Superlattice Structures and Infrared Detector Devices Incorporating the Same

The invention relates to a manufacturing method of a passivated InAs/GaSb secondary category superlattice infrared detector. The method comprises the following steps that: a metal organic chemical vapor deposition method or a molecular beam epitaxial method is employed to enable a buffer layer, a secondary superlattice layer, an intrinsic secondary superlattice light absorption layer, an N type secondary superlattice layer, and an N type ohmic contact layer to be successively grown on a substrate, so that an epitaxial wafer is formed; a wet etching method or a dry etching method is employed to carry out corrosion or etching on the epitaxial wafer; a spin coating machine is used to coat a resin material on the surface of the etched epitaxial wafer; exposure is carried out; medium baking and developing are carried out as well as an upper electrode and light entering window and lower electrode windows are formed on the resin material-coated epitaxial wafer; an electrode material is manufactured; photoetching is carried out on the electrode material to form upper electrodes and lower electrodes. According to the invention, a passivated infrared detector that is manufactured by the provided manufacturing method has low dark currents and ROA is increased; besides, the method has characteristics of simple manufacturing technology, strong passivation film strength and good passivation effect and the like.

Manufacturing method of passivated InAs/GaSb secondary category superlattice infrared detector

The invention discloses a method for epitaxially growing an InAs/GaSb type-II superlattice narrow-spectrum infrared photoelectric detector material. The method comprises the following steps of: selecting a substrate as a supporting body of an epitaxial layer; epitaxially growing a buffer layer on the substrate; cooling, and epitaxially growing a p-type doped InAs/GaSb type-II superlattice layer on the buffer layer; epitaxially growing an intrinsic InAs/GaSb type-II superlattice absorbing layer on the p-type doped InAs/GaSb type-II superlattice layer; epitaxially growing an n-type doped InAs/GaSb type-II superlattice layer on the intrinsic InAs/GaSb type-II superlattice absorbing layer; and epitaxially growing an n-type doped InAs cover layer on the n-type doped InAs/GaSb type-II superlattice layer to finish the epitaxial growth of the InAs/GaSb type-II superlattice narrow-spectrum infrared photoelectric detector material.

Method for epitaxially growing type-II superlattice narrow-spectrum infrared photoelectric detector material

We report a type-I GaSb-based laterally coupled distributed-feedback (LC-DFB) laser with shallow-etched gratings operating a continuous wave at room temperature without re-growth process. Second-order Bragg gratings are fabricated alongside the ridge waveguide by interference lithography. Index-coupled LC-DFB laser with a cavity of 1500 μm achieves single longitudinal mode continuous-wave operation at 20 °C with side mode suppression ratio (SMSR) as high as 24 dB. The maximum single mode continuous-wave output power is about 10 mW at room temperature (uncoated facet). A low threshold current density of 230 A/cm2 is achieved with differential quantum efficiency estimated to be 93 mW/A. The laser shows a good wavelength stability against drive current and working temperature.

2-μm single longitudinal mode GaSb-based laterally coupled distributed feedback laser with regrowth-free shallow-etched gratings by interference lithography

The invention discloses a GaAs based InAs/GaSb superlattice 1-3 micron band near infrared photodetector, which consists of the following components from bottom to top: a GaAs substrate, a GaAs buffer layer, an AlSb nucleating layer, a GaSb lower buffer layer, an AlSb/GaSb superlattice layer, a GaSb upper buffer layer, an InAs/GaSb superlattice layer, a GaSb cover layer and a titanium alloy electrode. The invention also discloses a method for manufacturing the GaAs based InAs/GaSb superlattice 1-3 micron band near infrared photodetector at the same time. By using the GaAs based InAs/GaSb superlattice 1-3 micron band near infrared photodetector and the method, a high-quality GaSb buffer layer is grown on the GaAs substrate, and the InAs/GaSb superlattice layer is grown on the GaSb buffer layer, thus an infrared photodetector with low dark current and low cost can be manufactured.

GaAs based InAs/GaSb superlattice near infrared photodetector and manufacturing method thereof

The invention discloses a method for producing an InAs/GaSb superlattice infrared photoelectric detector, comprising: placing a GaSb substrate on a sample holder of a molecular beam epitaxy device, deoxidizing at 530 DEG C, then heating the GaSb substrate to 560 DEG C and degassing for 3min under the protection of Sb; at the 520 DEG C growing a GaSb buffer layer on the GaSb substrate; cooling the GaSb substrate to 380-420 DEG C, successively growing a p type ohm contact layer, an InAs/GaSb superlattice layer and an InAs cover layer, finishing the prepareation of an epitaxial wafer; etching the prepared epitaxial wafer by using a standard photoetching technique and phosphoric acid and citric acid solutions, showing the p type ohm contact layer, and then sputtering electrodes made of alloy on the p type ohm contact layer and the InAs cover layer Through the invention, the production of the InAs/GaSb superlattice infrared photoelectric detector by using the InAs/GaSb superlattice material is realized

Manufacturing method of InAs/GaSb superlattice infrared photoelectric detector

GaSb-based 2.4 μm InGaAsSb/AlGaAsSb type-I quantum-well laser diode is fabricated. The laser is designed consisting of three In0.35Ga0.65As0.1Sb0.9/Al0.35Ga0.65As0.02Sb0.98 quantum wells with 1% compressive strain located in the central part of an undoped Al0.35Ga0.65As0.02Sb0.98 waveguide layer. The output power of the laser with a 50-μm-wide 1-mm-long cavity is 28mW, and the threshold current density is 400 A/cm2 under continuous wave operation mode at room temperature.

https://iopscience.iop.org/article/10.1088/0256-307X/31/5/054204/pdf

Room-Temperature Operation of 2.4 μm InGaAsSb/AlGaAsSb Quantum-Well Laser Diodes with Low-Threshold Current Density

The invention discloses a method of the epitaxial growth GaSb on a gallium arsenide substrate. A three buffer layers growth process is adopted in the method. The method specifically comprises the following steps: firstly, a GaAs buffer layer grows on a GaAs substrate under the condition of 580 DEG C; secondly, an AlSb buffer layer grows on the grown GaAs buffer layer under the condition of 550 DEG C; thirdly, a GaSb/AlSb super crystal lattice buffer layer grows on the AlSb buffer layer under the condition of 450 DEG C; fourthly, a GaSb epitaxial layer grows on the GaSb/AlSb super crystal lattice buffer layer under the condition of 400 to 500 DEG C. By utilizing the invention, a doublebuffer layer process is changed into a three-buffer layer process, firstly the GaAs buffer layer grows on the GaAs substrate, then the AlSb buffer layer grows on the grown GaAs buffer layer, the GaSb/AlSb super crystal lattice buffer layer grows on the AlSb buffer layer, finally the GaSb epitaxial layer grows on the GaSb/AlSb super crystal lattice buffer layer, and the perforating dislocation is reduced effectively, thereby the optical quality of the GaSb epitaxial layer is enhanced.

Method for epitaxial generation of gallium antimonide on gallium arsenide substrate

The invention discloses an InSb/GaSb quantum dot structure apparatus. The InSb/GaSb quantum dot structure apparatus comprises a GaSb substrate (101) which is used for supporting a whole two-point material structure. An extension structure which grows on the GaSb substrate sequentially comprises a GaSb lower buffer layer (102), a lattice-matched AlGaInAsSb lower barrier layer (103), a GaSb upper buffer layer (104), an InSb quantum dot layer (105), a GaSb protective layer (106), a lattice-matched AlGaInAsSb upper barrier layer (107), and a GaSb covering layer (108). The invention further discloses an MBE growing method of the quantum dot structure apparatus. According to the InSb/GaSb quantum dot structure apparatus and the growing method, InSb quantum dots can be prepared on the GaSb substrate, and the InSb/GaSb quantum dot structure apparatus and the growing method are applied to the design and the extension growing of an active region structure of a semiconductor photoelectric device which emits single photons in a mid-infrared wave section.

Zhengwei Ren

Papers

GaAs based InAs/GaSb superlattice near infrared photodetector and manufacturing method thereof

Manufacturing method of InAs/GaSb superlattice infrared photoelectric detector

Room-Temperature Operation of 2.4 μm InGaAsSb/AlGaAsSb Quantum-Well Laser Diodes with Low-Threshold Current Density

Method for epitaxial generation of gallium antimonide on gallium arsenide substrate

InSb/GaSb quantum dot structure apparatus and growing method