Zhen-Yu Li

TL;DR: In this paper, a graded-composition electron blocking layer (GEBL) with aluminum composition increasing along the [0001] direction was designed for c-plane InGaN/GaN light-emitting diodes (LEDs) by employing the band-engineering.

TL;DR: In this article, the continuous wave laser action on GaN-based vertical cavity surface emitting laser at room temperature was demonstrated. But the laser structure consists of a ten-pair Ta2O5/SiO2 distributed Bragg reflector (DBR), a 7λ-thick optical cavity, ten-pairs InGaN/GaN multiquantum wells with an AlGaN electron blocking layer, and a 29-pair AlN/ GaN DBR.

TL;DR: In this article, a nanoscale epitaxial lateral overgrowth (NELO) method on a SiO2 nanorod-array patterned sapphire substrate (NAPSS) was demonstrated.

TL;DR: In this article, a light emitting device consisting of a substrate, an N type semiconductor layer, an active layer, a super lattice multi-layer structure formed on the active layer and a P side electrode is formed on a portion of the P type semiconducting layer.

TL;DR: In this paper, a GaN/GaN light-emitting diodes (LEDs) with graded-thickness multiple quantum wells (GQW) was designed and grown by metal-organic chemical vapor deposition.