(1981). A User’s Guide to Vacuum Technology. Nuclear Technology: Vol. 55, No. 3, pp. 732-733.

A User's Guide to Vacuum Technology

Significance X-ray computed tomography (CT) is one of the most commonly used diagnostic three-dimensional imaging modalities today. Conventionally, this noninvasive technique generates contrast by measuring the X-ray attenuation properties of different tissues. Considering the wave nature of X-rays, complementary contrast can be achieved by further measuring their small-angle scattering (dark-field) properties. This provides additional valuable diagnostic information on otherwise unresolved tissue microstructure. In our work, we have translated this wave-optical mechanism from the optical bench to a human-sized prototype CT system. This involved the integration of an interferometer into a clinical CT gantry and overcoming several associated challenges regarding vibrations, continuous gantry rotation, and large field of view. This development puts complementary X-ray contrast within reach for real-word medical applications. X-ray computed tomography (CT) is one of the most commonly used three-dimensional medical imaging modalities today. It has been refined over several decades, with the most recent innovations including dual-energy and spectral photon-counting technologies. Nevertheless, it has been discovered that wave-optical contrast mechanisms—beyond the presently used X-ray attenuation—offer the potential of complementary information, particularly on otherwise unresolved tissue microstructure. One such approach is dark-field imaging, which has recently been introduced and already demonstrated significantly improved radiological benefit in small-animal models, especially for lung diseases. Until now, however, dark-field CT could not yet be translated to the human scale and has been restricted to benchtop and small-animal systems, with scan durations of several minutes or more. This is mainly because the adaption and upscaling to the mechanical complexity, speed, and size of a human CT scanner so far remained an unsolved challenge. Here, we now report the successful integration of a Talbot–Lau interferometer into a clinical CT gantry and present dark-field CT results of a human-sized anthropomorphic body phantom, reconstructed from a single rotation scan performed in 1 s. Moreover, we present our key hardware and software solutions to the previously unsolved roadblocks, which so far have kept dark-field CT from being translated from the optical bench into a rapidly rotating CT gantry, with all its associated challenges like vibrations, continuous rotation, and large field of view. This development enables clinical dark-field CT studies with human patients in the near future.

https://www.pnas.org/content/pnas/119/8/e2118799119.full.pdf

Dark-field computed tomography reaches the human scale

/pdf/pushing-the-limits-of-bottom-up-gold-filling-for-x-ray-3adzd1x0vo.pdf

Pushing the limits of bottom-up gold filling for x-ray grating interferometry

The orientation mismatch between the cone beam of an X-ray tube and the grating lines in a flat substrate remains a big challenge for laboratory grating-based X-ray interferometry, since it severely limits the imaging field of view. Here, we fabricated fan-shaped G0 source gratings by modulating the electric field during the deep reactive ion etching of silicon. The gold electroplated fan-shaped G0 grating (3.0 µm pitch) in a 20 keV interferometer improves the uniformity of the field of view with an increase of average visibility from 16.2% to 18.5% and a better angular sensitivity (by a factor 5.8) at the edges.

Laboratory X-ray interferometry imaging with a fan-shaped source grating

With the continuous miniaturization of electronic devices and the upcoming new technologies such as Artificial Intelligence (AI), Internet of Things (IoT), fifth-generation cellular networks (5G), etc., the electronics industry is achieving high-speed, high-performance, and high-density electronic packaging. Three-dimensional (3D) Si-chip stacking using through-Si-via (TSV) and solder bumping processes are the key interconnection technologies that satisfy the former requirements and receive the most attention from the electronic industries. This review mainly includes two directions to get a precise understanding, such as the TSV filling and solder bumping, and explores their reliability aspects. TSV filling addresses the DRIE (deep reactive ion etching) process, including the coating of functional layers on the TSV wall such as an insulating layer, adhesion layer, and seed layer, and TSV filling with molten solder. Solder bumping processes such as electroplating, solder ball bumping, paste printing, and solder injection on a Cu pillar are discussed. In the reliability part for TSV and solder bumping, the fabrication defects, internal stresses, intermetallic compounds, and shear strength are reviewed. These studies aimed to achieve a robust 3D integration technology effectively for future high-density electronics packaging.

A Review on the Fabrication and Reliability of Three-Dimensional Integration Technologies for Microelectronic Packaging: Through-Si-via and Solder Bumping Process

The key optical components of X-ray grating interferometry are gratings, whose profile requirements play the most critical role in acquiring high quality images. The difficulty of etching grating lines with high aspect ratios when the pitch is in the range of a few micrometers has greatly limited imaging applications based on X-ray grating interferometry. A high etching rate with low aspect ratio dependence is crucial for higher X-ray energy applications and good profile control by deep reactive ion etching of grating patterns. To achieve this goal, a modified Coburn–Winters model was applied in order to study the influence of key etching parameters, such as chamber pressure and etching power. The recipe for deep reactive ion etching was carefully fine-tuned based on the experimental results. Silicon gratings with an area of 70 × 70 mm2, pitch size of 1.2 and 2 μm were fabricated using the optimized process with aspect ratio α of ~67 and 77, respectively.

https://www.mdpi.com/2072-666X/11/9/864/pdf

Towards the Fabrication of High-Aspect-Ratio Silicon Gratings by Deep Reactive Ion Etching

Displacement Talbot lithography can rapidly pattern periodic nanostructures with high depth of focus over large area. Imperfections in the phase mask profile and the stage movement inaccuracies during the exposure cause linewidth variation in every second line of binary gratings. While this beating is barely visible in patterned photoresist, it leads to substantial depth variation when transferred into high aspect ratio silicon structures, because of micro-loading in deep reactive ion etching. A proper scan range compensated the defect, and a beating-free grating with pitch size of 1 μm and aspect ratio of 54:1 is demonstrated.

Optimization of displacement Talbot lithography for fabrication of uniform high aspect ratio gratings

We present a method to produce small pitch gratings for X-ray interferometric imaging applications, allowing the phase sensitivity to be increased and/or the length of the laboratory setup to be minimized. The method is based on fabrication of high aspect ratio silicon microstructures using deep reactive ion etching (Bosch technique) of dense grating arrays and followed by conformal electroplating of Au. We demonstrated that low resistivity Si substrates (<0.01 Ohm·cm) enable the metal seeding layer deposition step to be avoided, which is normally required to initiate the electroplating process. Etching conditions were optimized to realize Si recess structures with a slight bottom tapering, which ensured the void-free Au filling of the trenches. Vapor HF was used to remove the native oxide layer from the Si grating surface prior to electroplating in the cyanide-based Au electrolyte. Fabrication of Au gratings with pitch in the range 1.2–3.0 µm was successfully realized. A substantial improved aspect ratio of 45:1 for a pitch size of 1.2 µm was achieved with respect to the prior art on 4-inch wafer-based technology. The fabricated Au gratings were tested with X-ray interferometers in Talbot–Laue configuration with measured visibility of 13% at an X-ray design energy of 26 keV.

https://www.mdpi.com/2072-666X/12/5/517/pdf

Zhitian Shi

Papers

Towards the Fabrication of High-Aspect-Ratio Silicon Gratings by Deep Reactive Ion Etching

Laboratory X-ray interferometry imaging with a fan-shaped source grating

Optimization of displacement Talbot lithography for fabrication of uniform high aspect ratio gratings

Fabrication of X-ray Gratings for Interferometric Imaging by Conformal Seedless Gold Electroplating.

High Aspect Ratio Tilted Gratings Through Local Electric Field Modulation in Plasma Etching