Galvanomagnetic effects were measured on p - and n -CdSb single crystals above 77°K in weak magnetic fields (≤7500 gauss). No anisotropy of the Hall coefficient was observed below 250°K. The Hall mobility at 200°K was 390, 250 and 650 cm 2 /v·sec for holes and 520, 440 and 560 cm 2 /v·sec for electrons along the [100], [010] and [001]-directions, respectively. The mobility of holes along the [001]-direction was constant up to 3×10 16 cm -3 . The anisotropy of the transverse magnetoresistance coefficient was found to be larger for p - than for n -CdSb. The longitudinal magnetoresistance in n -CdSb does not vanish in any direction; in p -CdSb it does not vanish in the [100] and in the [010]-directions. A four valley model is proposed for the valence band structure.

Anisotropic Electrical Properties of Cadmium Antimonide

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Galvanomagnetic Effects in Cadmium Antimonide

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