Journal ArticleDOI
Constant False Alarm Rate Bias Control for an Avalanche Photodiode Laser Receiver
B. E. Dobratz,R. P. Farnsworth +1 more
TLDR
In this paper, a constant false alarm rate closed loop is used to control photodiode bias over varying operating conditions such as temperature or ambient illumination and changes in photode parameters.Abstract:
A constant false alarm rate closed loop controls avalanche photodiode bias over varying operating conditions such as temperature or ambient illumination and changes in photodiode parameters. The photodiode output is amplified, sensed in a threshold circuit, shaped to a constant amplitude and duration, and integrated. The integrator, also fed by a constant current representing the desired false alarm rate, generates an output proportional to the integrated error in false alarm rate. This control signal alters the photodiode bias until the integrated false alarm rate error is zero.read more
Citations
More filters
Patent
Laser range finder
TL;DR: In this article, a laser-based range finder includes a self-calibrating precision timing circuit and an automatic noise threshold circuit, which can be viewed on an in-sight display during aiming and operation of the instrument.
Patent
Detector of a light beam with a photodiode and bias control circuit
TL;DR: In this paper, the average current through the avalanche photodiode is measured by a circuit consisting of a circuit (28) and a means (32) controlled by this circuit and applied to the diode bias voltage V such that the average currents are substantially equal to a value of adjustable setpoint.
Journal ArticleDOI
A nanosecond gate-mode-driven silicon avalanche photodiode and its application to measuring fluorescence lifetimes of Ce-doped YAG ceramics
TL;DR: In this article, the authors proposed a silicon avalanche photodiode (Si-APD)-based boxcar-integrator, in which the Si-APD is driven in the gate mode, by setting the direct current reverse bias voltage Vr applied to the APD to below its breakdown voltage Vb.
References
More filters
Journal ArticleDOI
An optimized avalanche photodiode
TL;DR: In this paper, the feasibility of a fast, high gain photodetector based on the phenomenon of avalanche multiplication in semiconductors has been investigated and a practical silicon device optimized for the detection of light with a wavelength of 9000A is suggested and design parameters are presented.
Journal ArticleDOI
Avalanche breakdown of diffused silicon p-n junctions
R.A. Kokosa,R.L. Davies +1 more
TL;DR: In this article, the avalanche breakdown voltages of diffused silicon p-n junctions were calculated by assuming an error function diffused impurity distribution, and the theoretical results were verified experimentally with samples having breakdown voltage ranging from 100 volts to 9000 volts.
Journal ArticleDOI
A model of the avalanche photodiode
James R. Biard,W.N. Shaunfield +1 more
TL;DR: In this article, a general model for the avalanche photodiode is presented and an expression for the signal-to-noise ratio is derived based on an entire detector system.
Journal ArticleDOI
Internal Pulse Amplification in Silicon p‐n Junction Radiation Detection Junctions
TL;DR: In this article, internal pulse amplification in silicon pn junction radiation detectors has been observed in the energy range from 0.05 to 1.0 MeV incident, with significant multiplication occurring at internal electric field values of greater than 150 kV/cm.