scispace - formally typeset
Patent

Creating default states for non-volatile memory elements

Reads0
Chats0
TLDR
In this paper, a circuit has a wordline with an NVM element utilizing a first FET coupled to bitline true and a second FET coupling to the bitline complement.
Abstract
A circuit has a wordline with an NVM element utilizing a first FET coupled to bitline true and a second FET coupled to bitline complement. A NFET coupled to the bitline complement is configured to pull bitline true toward ground in response to bitline complement reaching a first voltage. One or more wordline drivers are coupled to the NVM element such that a first path from a wordline driver is coupled to the first FET while a second path from a wordline driver is coupled to the second FET. The first path is current-limited in comparison to the second path, such that a first slew rate between a wordline driver and the first FET is slower than a second slew rate between a wordline driver and the second FET. The slew rate disparity allows the bitline complement to reach the first voltage.

read more

References
More filters
Patent

Buffering systems for accessing multiple layers of memory in integrated circuits

Robert Norman
TL;DR: In this article, the authors present a third-dimensional memory technology for accessing memory in multiple layers of memory implementing, for example, third dimension memory technology, where the memory cells can be third-dimension memory cells.
Patent

Method of dynamically controlling program verify levels in multilevel memory cells

Chao I Wu
TL;DR: In this paper, pre-program verify levels for a multilevel read-only memory cell are generated dynamically, taking into account a program verify level, an over-program budget, and a second-bit effect budget.
Patent

Electrically programmable fuse sense circuit

TL;DR: In this article, a design structure for a sense circuit with an electrically programmable fuse and a reference resistance was presented. But the circuit was not designed to store the state of the programmable fuses.
Patent

Dynamically read fuse cell

TL;DR: In this article, a dynamically read fuse cell includes a first circuit which includes a known reference resistance R ref, and a second circuit including a programmed fuse having a resistance R fuse ; the state of the programmed fuse is to be read.
Patent

Testing method for reducing number of overkills by repeatedly writing data to addresses in a non-volatile memory

TL;DR: In this paper, a testing method for non-volatile memory includes writing a first set of data to a set of addresses in a nonvolatile NVRAM, reading a second data set from the set of address, and then writing the first data set to the same address again if the first sets of data and the second data sets are not identical.